Cited 3 time in
Cited 3 time in
Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer
- Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer
- Kim, Min Je; Choi, Shinyoung; Lee, Myeongjae; Heo, Hyojung; Lee, Youngu; Cho, Jeong Ho; Kim, BongSoo
- DGIST Authors
- Heo, Hyojung; Lee, Youngu
- Issue Date
- ACS Applied Materials and Interfaces, 9(22), 19011-19020
- Article Type
- Ambipolar Transistors; Annealing; Annealing Temperatures; Carrier Mobility; Carrier Mobility; Conjugated Polymers; Diketopyrrolopyrrole; Electron Accepting; Electron Mobility; Electrons; Energy Gap; Field Effect Transistors; Hole Mobility; Low Band Gap Polymer; Low Bandgap Polymers; Near Infrared Photoresponse; Organic Solar Cells; Performance; Photo Responsive Property; Photocurrent/Dark Current Ratios; Photoresponse; Photoresponse Characteristics; Photoresponses; Photoswitching; Photoswitching; Phototransistor; Phototransistors; Phototransistors; Polymer Films; Polymers; Structure Property Relationships; Thin Film Transistors (TFTs)
- In this Article, low-bandgap pTTDPP-BT polymers based on electron-accepting pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP) and benzothiadiazole (BT) and electron-donating thienothiophene (TT) moieties were synthesized. Phototransistors have been fabricated using ambipolar-behaving pTTDPP-BT polymers as active channel materials. The electrical and photoresponsive properties of the pTTDPP-BT phototransistors were strongly dependent on the film annealing temperature. As-spun pTTDPP-BT phototransistors exhibited a low hole mobility of 0.007 cm2/(V·s) and a low electron mobility of 0.005 cm2/(V·s), which resulted in low photocurrent detection due to the limited transport of the charge carriers. Thermal treatment of the polymer thin films led to a significant enhancement in the carrier mobilities (hole and electron mobilities of 0.066 and 0.115 cm2/(V·s), respectively, for 200 °C annealing) and thus significantly improved photoresponsive properties. The 200 °C-annealed phototransistors showed a wide-range wavelength (405-850 nm) of photoresponse, and a high photocurrent/dark-current ratio of 150 with a fast photoswitching speed of less than 100 ms. This work demonstrates that a dual acceptor-containing low band gap polymer can be an important class of material in broadband photoresponsive transistors, and the crystallinity of the semiconducting polymer layer has a significant effect on the photoresponse characteristics. © 2017 American Chemical Society.
- American Chemical Society
- Related Researcher
Lee, Youn Gu
Organic & Printed Electronics Laboratory(OPEL)
OTF Solar cell; OLED; Printed Electronics; 유기박막형 태양전지; OLED; Printed Electronics
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- Energy Science and EngineeringOrganic & Printed Electronics Laboratory(OPEL)1. Journal Articles
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