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Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer

Title
Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer
Authors
Kim, Min JeChoi, ShinyoungLee, MyeongjaeHeo, HyojungLee, YounguCho, Jeong HoKim, BongSoo
DGIST Authors
Heo, Hyojung; Lee, Youngu
Issue Date
2017-06-07
Citation
ACS Applied Materials and Interfaces, 9(22), 19011-19020
Type
Article
Article Type
Article
Keywords
Ambipolar TransistorsAnnealingAnnealing TemperaturesCarrier MobilityCarrier MobilityConjugated PolymersDiketopyrrolopyrroleElectron AcceptingElectron MobilityElectronsEnergy GapField Effect TransistorsHole MobilityLow Band Gap PolymerLow Bandgap PolymersNear Infrared PhotoresponseOrganic Solar CellsPerformancePhoto Responsive PropertyPhotocurrent/Dark Current RatiosPhotoresponsePhotoresponse CharacteristicsPhotoresponsesPhotoswitchingPhotoswitchingPhototransistorPhototransistorsPhototransistorsPolymer FilmsPolymersStructure Property RelationshipsThin Film Transistors (TFTs)
ISSN
1944-8244
Abstract
In this Article, low-bandgap pTTDPP-BT polymers based on electron-accepting pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP) and benzothiadiazole (BT) and electron-donating thienothiophene (TT) moieties were synthesized. Phototransistors have been fabricated using ambipolar-behaving pTTDPP-BT polymers as active channel materials. The electrical and photoresponsive properties of the pTTDPP-BT phototransistors were strongly dependent on the film annealing temperature. As-spun pTTDPP-BT phototransistors exhibited a low hole mobility of 0.007 cm2/(V·s) and a low electron mobility of 0.005 cm2/(V·s), which resulted in low photocurrent detection due to the limited transport of the charge carriers. Thermal treatment of the polymer thin films led to a significant enhancement in the carrier mobilities (hole and electron mobilities of 0.066 and 0.115 cm2/(V·s), respectively, for 200 °C annealing) and thus significantly improved photoresponsive properties. The 200 °C-annealed phototransistors showed a wide-range wavelength (405-850 nm) of photoresponse, and a high photocurrent/dark-current ratio of 150 with a fast photoswitching speed of less than 100 ms. This work demonstrates that a dual acceptor-containing low band gap polymer can be an important class of material in broadband photoresponsive transistors, and the crystallinity of the semiconducting polymer layer has a significant effect on the photoresponse characteristics. © 2017 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/4152
DOI
10.1021/acsami.7b03058
Publisher
American Chemical Society
Related Researcher
  • Author Lee, Youn Gu Organic & Printed Electronics Laboratory(OPEL)
  • Research Interests OTF Solar cell; OLED; Printed Electronics; 유기박막형 태양전지; OLED; Printed Electronics
Files:
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Collection:
Energy Science and EngineeringOrganic & Printed Electronics Laboratory(OPEL)1. Journal Articles


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