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31-mode piezoelectric micromachined ultrasonic transducer with PZT thick film by granule spraying in vacuum process
- 31-mode piezoelectric micromachined ultrasonic transducer with PZT thick film by granule spraying in vacuum process
- Jung, J[Jung, Joontaek]; Annapureddy, V[Annapureddy, Venkateswarlu]; Hwang, GT[Hwang, Geon-Tae]; Song, Y[Song, Youngsup]; Lee, W[Lee, Wonjun]; Kang, W[Kang, Woojin]; Ryu, J[Ryu, Jungho]; Choi, H[Choi, Hongsoo]
- DGIST Authors
- Jung, J[Jung, Joontaek]; Lee, W[Lee, Wonjun]; Choi, H[Choi, Hongsoo]
- Issue Date
- Applied Physics Letters, 110(21)
- Article Type
- Aerosol Deposition; Deposition Rates; Diagnosis; Fabricationacoustic Impedance; Granulation; High Deposition Rates; Impedance Matching (Acoustic); Intravascular Ultrasound; Lead; Low Power Consumption; Medical Diagnosis System; MEMS; Micro Machined Ultrasonic Transducer; Performance; Piezoelectric Layers; Piezoelectric Micromachined Ultrasonic Transducer (PMUT); Piezoelectric Transducers; Piezoelectricity; PMUT Arrays; Silicon on Insulator Technology; Silicon on Insulator Wafers; Silicon Wafers; Temperature; Thick Films; Transducers; Ultrasonic Transducers
- A piezoelectric micromachined ultrasonic transducer (pMUT) is an ideal device for portable medical diagnosis systems, intravascular ultrasound systems, and ultrasonic cameras because of its favorable characteristics including small size, acoustic impedance matching with the body, low power consumption, and simple integration with the systems. Despite these advantages, practical applications are limited because of insufficient acoustic pressure of the pMUT caused by the thin active piezoelectric layer. Here, we report the fabrication of a thick piezoelectric Pb(Zr,Ti)O3 (PZT) film-based pMUT device having high deflection at low driving voltage using the granule spraying in vacuum (GSV) process. Pre-patterned high-density thick (exceeding 8 μm) PZT films were grown on 6-inch-diameter Si/SiO2/Ti/Pt silicon-on-insulator wafers at room temperature at a high deposition rate of ∼5 μm min-1. The fabrication process using the proposed GSV process was simple and fast, and the deflection of the pMUT exhibited a high value of 0.8 μm. © 2017 Author(s).
- American Institute of Physics Inc.
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