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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
- A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels
- Jo, H.; Choi, J.-H.; Hyun, C.-M.; Seo, S.-Y.; Kim, D.Y.; Kim, C.-M.; Lee, Myoung Jae; Kwon, J.-D.; Moon, H.-S.; Kwon, S.-H.; Ahn, J.-H.
- DGIST Authors
- Lee, Myoung Jae
- Issue Date
- Scientific Reports, 7(1)
- Article Type
- Al2O3; Capacitance; Chemical-Vapor-Deposition; Field-Effect Transistors; Film Transistors; Liquids; Low-Power; Mobility; MoS2 Transistors; Polymer
- We propose a hybrid gate structure for ion gel dielectrics using an ultra-thin Al2O3 passivation layer for realizing high-performance devices based on electric-double-layer capacitors. Electric-double-layer transistors can be applied to practical devices with flexibility and transparency as well as research on the fundamental physical properties of channel materials; however, they suffer from inherent unwanted leakage currents between electrodes, especially for channel materials with low off-currents. Therefore, the Al2O3 passivation layer was introduced between the metal electrodes and ion gel film as a leakage current barrier; this simple approach effectively reduced the leakage current without capacitance degradation. In addition, we confirmed that a monolayer MoS2 transistor fabricated with the proposed hybrid gate dielectric exhibited remarkably enhanced device properties compared to a transistor using a normal ion gel gate dielectric. Our findings on a simple method to improve the leakage current properties of ion gels could be applied extensively to realize high-performance electric-double-layer transistors utilizing various channel materials. © 2017 The Author(s).
- Nature Publishing Group
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- Intelligent Devices and Systems Research Group1. Journal Articles
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