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New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts
- New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts
- Lee, Su Yeong; Yun, Won Seok; Lee, J. D.
- DGIST Authors
- Lee, J. D.
- Issue Date
- ACS Applied Materials and Interfaces, 9(8), 7873-7877
- Article Type
- Augmented Wave Method; Band Unfolding; Black Phosphorus Metal Contacts; Calculations; Contact Polarity; Electron Affinity; Electronic Properties; Electronic Structure; Field Effect Transistors; First Principles Calculation; First Principles Calculation; Interfaces; Metal Contacts; Metals; Mobility; Monolayer; New Method; Phosphorus; Scandium; Schottky Barrier Diodes; Schottky Barrier Height; Schottky Barrier Heights; Semiconductor; Semiconductor Metal Boundaries
- Schottky barrier height and carrier polarity are seminal concepts for a practical device application of the interface between semiconductor and metal electrode. Investigation of those concepts is usually made by a conventional method such as the Schottky-Mott rule, incorporating the metal work function and semiconductor electron affinity, or the Fermi level pinning effect, resulting from the metal-induced gap states. Both manners are, however, basically applied to the bulk semiconductor metal contacts. To explore few-layer black phosphorus metal contacts far from the realm of bulk, we propose a new method to determine the Schottky barrier by scrutinizing the layer-by-layer phosphorus electronic structure from the first-principles calculation combined with the state-of-the-art band unfolding technique. In this study, using the new method, we calculate the Schottky barrier height and determine the contact polarity of Ti, Sc, and Al metal contacts to few-layer (mono-, bi-, tri-, and quadlayer) black phosphorus. This gives a significant physical insight toward the utmost layer-by-layer manipulation of electronic properties of few-layer semiconductor metal contacts. © 2017 American Chemical Society.
- American Chemical Society
- Related Researcher
Lee, Jae Dong
Light and Matter Theory Laboratory
Theoretical Condensed Matter Physics; Ultrafast Dynamics and Optics; Nonequilibrium Phenomena
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- Emerging Materials ScienceLight and Matter Theory Laboratory1. Journal Articles
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