Cited time in webofscience Cited time in scopus

Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride

Title
Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
Author(s)
Choi, Sung KyuChae, Weon-SikSong, BokyungCho, Chang-HeeChoi, JinaHan, Dong SukChoi, WonyongPark, Hyunwoong
Issued Date
2016-08
Citation
Journal of Materials Chemistry A, v.4, no.36, pp.14008 - 14016
Type
Article
Keywords
Atomic Layer DepositionCARBON-DIOXIDECharge TransferElectrocatalysisElectrocatalystsElectrodesEVOLUTION REACTIONFinite Difference Time Domain MethodFinite Difference Time Domain SimulationsHeterojunctionsHydrogen Evolution ReactionsHydrogen ProductionLong-Wavelength PhotonsLow Temperature PlasmasNitridesPERFORMANCEPHOTOANODESPHOTOCATHODESPhotoelectrochemical Hydrogen ProductionPhotogenerated Charge CarriersReversible Hydrogen ElectrodesSemiconductor Quantum WellsSiliconSOLAR-CELLSTemPERATURETime-Resolved PhotoluminescenceTime Domain AnalysisTiO2TitaniumTitanium CompoundsTitanium NitrideWATER OXIDATIONWire
ISSN
2050-7488
Abstract
p-Si wire arrays overlaid with an ultrathin titanium nitride (TiN) film are developed and demonstrated to be an efficient and robust photocathode for hydrogen production. Arrays of vertically aligned 20 μm long p-Si microwires of varying diameters (1.6-14.6 μm) are fabricated via a photolithographic technique, and then the wires are coated with a TiN nanolayer 2-20 nm thick by low-temperature plasma-enhanced atomic layer deposition. The optimized heterojunction consisting of 1.6 μm-thick wires covered by 10 nm thick TiN exhibits significantly improved performance for hydrogen evolution reaction under simulated sunlight (AM 1.5G, 100 mW cm-2). It displays a photocurrent onset potential of ∼+0.4 V vs. reversible hydrogen electrode (RHE), and a faradaic efficiency of nearly 100% at 0 V vs. RHE over 20 h of reaction. Time-resolved photoluminescence decay reveals that the lifetime (τ) of the photogenerated charge carriers in the optimized wire/TiN heterojunction is ∼60% shorter than those using thicker wires, suggesting significantly faster charge transfer. Such remarkable performance is attributed to enhanced transfer of the minority carriers in the radial direction of the wires. TiN performs the triple roles of antireflection, protection of the Si surface, and electrocatalysis of hydrogen production. Finite-difference time-domain simulation reveals a significant increase in the absorptance of wire arrays with TiN film, and that long wavelength photons are more effectively absorbed by the wire/TiN arrays. © 2016 The Royal Society of Chemistry.
URI
http://hdl.handle.net/20.500.11750/5142
DOI
10.1039/c6ta05200b
Publisher
Royal Society of Chemistry
Related Researcher
  • 조창희 Cho, Chang-Hee
  • Research Interests Semiconductor; Nanophotonics; Light-Matter Interaction
Files in This Item:

There are no files associated with this item.

Appears in Collections:
Department of Physics and Chemistry Future Semiconductor Nanophotonics Laboratory 1. Journal Articles

qrcode

  • twitter
  • facebook
  • mendeley

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE