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Effects of Ta Addition Through Co-Sputtering on the Electrical Characteristics of Indium Tin Oxide Thin Film Transistors

Title
Effects of Ta Addition Through Co-Sputtering on the Electrical Characteristics of Indium Tin Oxide Thin Film Transistors
Authors
Park, Si-NaeSon, Dae-HoSung, Shi-JoonKang, Jin-KyuKim, Dae-Hwan
DGIST Authors
Sung, Shi-Joon; Kang, Jin-KyuKim, Dae-Hwan
Issue Date
2015-01
Citation
Journal of Nanoscience and Nanotechnology, 15(1), 386-390
Type
Article
Article Type
Article
Keywords
Electrical CharacteristicElectron AffinityElectronsHigh-K MaterialHigh-K MaterialsIndiumIndium Tin Oxide Thin FilmsMetal Oxide Thin-Film TransistorMetal Oxide Thin-Film TransistorsON/OFF Current RatioSemiconducting Organic CompoundsSub-Threshold SwingTaInSnOThin-Film Transistor (TFT)Thin-Film Transistors (TFTs)Thin-FilmsTin Oxides
ISSN
1533-4880
Abstract
We have investigated the effects of adding (Ta) ions to InSnO thin films by co-sputtering on the performance of InSnO thin film transistors (TFTs). TaInSnO TFTs exhibited significantly lower off currents and higher on/off current ratios. Ta ions, owing to their strong affinity to oxygen suppress the formation of free electron carriers in thin films; and hence, play an important role in enhancing the electrical characteristics of the TFTs. The optimized TaInSnO TFTs showed high on/off ratios and low subthreshold swings. Copyright © 2015 American Scientific Publishers All rights reserved.
URI
http://hdl.handle.net/20.500.11750/5212
DOI
10.1166/jnn.2015.8341
Publisher
American Scientific Publishers
Related Researcher
Files:
There are no files associated with this item.
Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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