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Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)(4) thin films grown by sputtering-based two-step process

Title
Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)(4) thin films grown by sputtering-based two-step process
Authors
Kim, Gee YeongKim, Ju RiJo, WilliamSon, Dae-HoKim, Dae-HwanKang, Jin-Kyu
DGIST Authors
Kim, Dae-HwanKang, Jin-Kyu
Issue Date
2014-01-08
Citation
Nanoscale Research Letters, 9
Type
Article
Article Type
Article
Keywords
Atomic Force MicroscopyConductive Atomic Force MicroscopyCopperCu(In, Ga)Se2Cu2ZnSn(S, Se)4Electric PropertiesElectrical ParameterGalliumGrain BoundariesKelvin Probe Force MicroscopyKesteriteKesteritesProbesRadio Frequency SputteringSemiconducting Selenium CompoundsSolar-Cell ApplicationsSolar CellsStacked PrecursorsSurface PotentialThin-Film Solar CellsThin-FilmsTin
ISSN
1556-276X
Abstract
Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2. © 2014 Kim et al.
URI
http://hdl.handle.net/20.500.11750/5271
DOI
10.1186/1556-276X-9-10
Publisher
Springer
Related Researcher
Files:
There are no files associated with this item.
Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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