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Annealing Time Dependence of Crystallization in Cu2ZnSnSe4 Films

Title
Annealing Time Dependence of Crystallization in Cu2ZnSnSe4 Films
Authors
Kim, ChanHong, SungwookBae, HongsubRhee, IlsuKim, Hong TakKim, Dae-HwanKang, Jin-Kyu
DGIST Authors
Kim, Dae-HwanKang, Jin-Kyu
Issue Date
2013-01-01
Citation
Molecular Crystals and Liquid Crystals, 586(1), 154-160
Type
Article
Article Type
Article
Keywords
AnnealingAnnealing TimeBand Gap EnergyCopperCrystallizationCZTSeEnergy GapLattice ConstantsMetal PrecursorRapid Thermal Processing (RTP)RTPSelenizationSingle CrystalsSoda Lime Glass SubstrateSolar CellSolar CellsSubstratesTinX Ray DiffractionXrd PatternsZ TransformsZinc
ISSN
1542-1406
Abstract
Cu2 ZnSnSe4 (CZTSe) films were formulated by the selenization of Cu(Zn, Sn) (CZT) metal precursors. The CZT precursor was prepared by depositing zinc onto a Cu-Sn layer co-sputtered on molybdenum-coated soda-lime glass substrates. Selenium was evaporated thermally onto the CZT precursor. The resulting CZTSe film was then annealed at 450 °C for various annealing times (1, 3, 5, 10 and 15 min) using a rapid thermal process (RTP). Crystallization of the CZTSe film as a function of the annealing time was observed by X-ray diffraction (XRD). The XRD patterns of the films annealed over 3 min were well matched to those of a CZTSe single crystal. The lattice parameters of the CZTSe films annealed over 5 min were a = 5.639 Å and c = 11.356 Å. These values were reasonably close to the lattice parameters of a single crystal of Cu2 ZnSnSe4 (a = 5.693 Å and c = 11.333 Å). The energy gap of the CZTSe films was 1.14 eV. © 2013 Copyright Taylor and Francis Group, LLC.
URI
http://hdl.handle.net/20.500.11750/5326
DOI
10.1080/15421406.2013.853518
Publisher
Taylor and Francis Ltd.
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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