Cited 2 time in webofscience Cited 1 time in scopus

Investigation of Crystallization Behavior of CIG-Se Bi-Layer Thin Films

Title
Investigation of Crystallization Behavior of CIG-Se Bi-Layer Thin Films
Authors
Park, Mi SunSung, Shi-JoonKim, Dae-HwanKang, Jin-Kyu
DGIST Authors
Sung, Shi-Joon; Kim, Dae-HwanKang, Jin-Kyu
Issue Date
2012-04
Citation
Journal of Nanoscience and Nanotechnology, 12(4), 3488-3491
Type
Article
Article Type
Article; Proceedings Paper
Keywords
Bi-LayerChemical Solution Deposition (CSD)CIG-Se Bi-LayerCIG-Se Thin FilmCopper Indium Gallium DiselenideCrystallization BehaviorEnergy Dispersive SpectrometryFilm PreparationHeat TreatmentScanning Electron MicroscopySelenium CompoundsSemiconducting Selenium CompoundsSolar CellSolar CellsThermal Treatment TemperatureThin-FilmsTwo LayersUV-Visible SpectrophotometryX Ray Diffraction
ISSN
1533-4880
Abstract
Copper indium gallium diselenide (CIGSe) thin film was fabricated via a thermal treatment of CIG-Se bi-layer thin films. A CIG layer was prepared first, by a chemical solution deposition (CSD) process. The Se layer was deposited separately on the CIG layer by evaporation. The CIG-Se bi-layer then underwent a thermal treatment to cause a reaction between the two layers. In order to investigate the mechanism of CIG-Se bi-layer crystallization, the thermal treatment temperature was varied. The properties of the prepared CIGSe 2 thin films were analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectrometry (EDS), and UV-visible spectrophotometry. © 2012 American Scientific Publishers.
URI
http://hdl.handle.net/20.500.11750/5364
DOI
10.1166/jnn.2012.5579
Publisher
American Scientific Publishers
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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