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Effect of VI/II Gas Ratio on the Epitaxial Growth of ZnO Films by Metalorganic Chemical Vapor Deposition
- Effect of VI/II Gas Ratio on the Epitaxial Growth of ZnO Films by Metalorganic Chemical Vapor Deposition
- Choi, Yong-Seok; Hwang, Dae-Kue; Kwon, Bong-Joon; Kang, Jang-Won; Cho, Yong-Hoon; Park, Seong-Ju
- DGIST Authors
- Hwang, Dae-Kue
- Issue Date
- Japanese Journal of Applied Physics, 50(10)
- Article Type
- Atomic Force Microscopy; Epitaxial Films; Epitaxial Growth; Excitonic Emission; Excitons; Film Growth; Flat Terraces; Free-Exciton Emissions; Gas Ratio; Longitudinal Optical Phonons; Low Temperature Photoluminescence; Metallic Films; Metallorganic Chemical Vapor Deposition; Neutral Donor; Optical Qualities; Photoluminescence; Root Mean Square Roughness; Zinc Oxide; ZnO; ZnO Films
- We report the effect of the VI/II ratio on the metalorganic chemical vapor deposition (MOCVD) growth of ZnO film. The surface of ZnO film becomes very smooth as the VI/II ratio increases. Atomic force microscopy measurement shows that ZnO films grown at a VI/II ratio of 25,000 have atomically flat terraces with a root-mean-square roughness of 0.2 nm. Low-temperature photoluminescence spectra also reveal a very sharp excitonic emission comprised of a neutral donor bound exciton emission and a free exciton emission with first and second longitudinal optical (LO) phonon replicas, indicating that the ZnO epilayer is of a high optical quality. © 2011 The Japan Society of Applied Physics.
- Institute of Physics Publishing
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