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Recovery Mechanism of Degraded Black Phosphorus Field-Effect Transistors by 1,2-Ethanedithiol Chemistry and Extended Device Stability
- Recovery Mechanism of Degraded Black Phosphorus Field-Effect Transistors by 1,2-Ethanedithiol Chemistry and Extended Device Stability
- Kwak, Do Hyun; Ra, Hyun Soo; Yang, Jin Hoon; Jeong, Min Hye; Lee, A Young; Lee, Won Ki; Hwang, Jun Yeon; Lee, Joo Hyoung; Lee, Jong Soo
- DGIST Authors
- Lee, Jong Soo
- Issue Date
- Article Type
- Article in Press
- Atomic force microscopy; Density functional theory; Optoelectronic devices; Phosphoric acid; Phosphorus; Recovery; Semiconductor devices; Transistors; X ray photoelectron spectroscopy; 1,2-ethanedithiol; Device characteristics; Hexagonal boron nitride; Material characteristics; Optoelectronic applications; Recovering effect; Recovery mechanisms; Underlying principles; Field effect transistors
- Black phosphorus (BP) has drawn enormous attention for both intriguing material characteristics and electronic and optoelectronic applications. In spite of excellent advantages for semiconductor device applications, the performance of BP devices is hampered by the formation of phosphorus oxide on the BP surface under ambient conditions. It is thus necessary to resolve the oxygen-induced degradation on the surface of BP to recover the characteristics and stability of the devices. To solve this problem, it is demonstrated that a 1,2-ethanedithiol (EDT) treatment is a simple and effective way to remove the bubbles formed on the BP surface. The device characteristics of the degraded BP field-effect transistor (FET) are completely recovered to the level of the pristine cases by the EDT treatment. The underlying principle of bubble elimination on the BP surface by the EDT treatment is systematically analyzed by density functional theory calculation, atomic force microscopy, and X-ray photoelectron spectroscopy analysis. In addition, the performance of the hexagonal boron nitride-protected BP FET is completely retained without changing device characteristics even when exposed to 30 d or more in air. The EDT-induced recovering effect will allow a new route for the optimization of electronic and optoelectronic devices based on BP. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- Wiley-VCH Verlag
- Related Researcher
Lee, Jong Soo
Multifuntional Nanomaterials & Energy Devices Lab(MNEDL)
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