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Recovery Mechanism of Degraded Black Phosphorus Field-Effect Transistors by 1,2-Ethanedithiol Chemistry and Extended Device Stability

Title
Recovery Mechanism of Degraded Black Phosphorus Field-Effect Transistors by 1,2-Ethanedithiol Chemistry and Extended Device Stability
Authors
Kwak, Do HyunRa, Hyun SooYang, Jin HoonJeong, Min HyeLee, A YoungLee, Won KiHwang, Jun YeonLee, Joo HyoungLee, Jong Soo
DGIST Authors
Lee, Jong Soo
Issue Date
ACCEPT
Citation
Small
Type
Article
Article Type
Article in Press
Keywords
Atomic force microscopyDensity functional theoryOptoelectronic devicesPhosphoric acidPhosphorusRecoverySemiconductor devicesTransistorsX ray photoelectron spectroscopy1,2-ethanedithiolDevice characteristicsHexagonal boron nitrideMaterial characteristicsOptoelectronic applicationsRecovering effectRecovery mechanismsUnderlying principlesField effect transistors
ISSN
1613-6810
Abstract
Black phosphorus (BP) has drawn enormous attention for both intriguing material characteristics and electronic and optoelectronic applications. In spite of excellent advantages for semiconductor device applications, the performance of BP devices is hampered by the formation of phosphorus oxide on the BP surface under ambient conditions. It is thus necessary to resolve the oxygen-induced degradation on the surface of BP to recover the characteristics and stability of the devices. To solve this problem, it is demonstrated that a 1,2-ethanedithiol (EDT) treatment is a simple and effective way to remove the bubbles formed on the BP surface. The device characteristics of the degraded BP field-effect transistor (FET) are completely recovered to the level of the pristine cases by the EDT treatment. The underlying principle of bubble elimination on the BP surface by the EDT treatment is systematically analyzed by density functional theory calculation, atomic force microscopy, and X-ray photoelectron spectroscopy analysis. In addition, the performance of the hexagonal boron nitride-protected BP FET is completely retained without changing device characteristics even when exposed to 30 d or more in air. The EDT-induced recovering effect will allow a new route for the optimization of electronic and optoelectronic devices based on BP. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
URI
http://hdl.handle.net/20.500.11750/5588
DOI
10.1002/smll.201703194
Publisher
Wiley-VCH Verlag
Related Researcher
  • Author Lee, Jong Soo Multifuntional Nanomaterials & Energy Devices Lab(MNEDL)
  • Research Interests
Files:
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Collection:
ETC1. Journal Articles


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