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Effects of Back Annealing on the Structural and Electrical Properties of Cu2ZnSnSe4 Thin Films Grown by a Modified Two-Step Process

Title
Effects of Back Annealing on the Structural and Electrical Properties of Cu2ZnSnSe4 Thin Films Grown by a Modified Two-Step Process
Authors
Ko, Byoung SooKim, Jung SikJeon, Dong HwanKang, Jin KyuHwang, Dae Kue
DGIST Authors
Kang, Jin KyuHwang, Dae Kue
Issue Date
2018-04
Citation
Science of Advanced Materials, 10(4), 580-585
Type
Article
Article Type
Article
Keywords
SOLAR-CELLSDEPOSITIONDEVICE
ISSN
1947-2935
Abstract
In this study, we investigate the electrical and structural properties of Cu2ZnSnSe4 (CZTSe) thin films grown by a two-step process. CZTSe precursors are deposited on a Mo-coated soda-lime glass (Mo/SLG) by coevaporation at 150 degrees C. After deposition, the precursors are annealed in different directions under normal pressure by rapid thermal processing (RTP) at 590 degrees C. One precursor is annealed from the top of the precursor (front annealing), and another is annealed from the Mo/SLG side (back annealing). Using a back-annealing RTP of the co-evaporated Cu-Zn-Sn-Se precursor, the efficiency of CZTSe devices is increased by more than 60%. The surface morphology and grain size of the CZTSe thin film is greatly improved after back annealing. In the XRD patterns, the back-annealed CZTSe thin film also shows the improved crystal quality for the (112), (024), and (132) planes. The reverse saturation current density of the back-annealed CZTSe thin film is 10 times smaller than that of the front-annealed thin film. From these results, we find that the back-annealing method can improve the structural and electrical properties of CZTSe thin films.
URI
http://hdl.handle.net/20.500.11750/5773
DOI
10.1166/sam.2018.3081
Publisher
AMER SCIENTIFIC PUBLISHERS
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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