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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 7 of 7

Article
Bismuth-metal nanocrystals self-embedded in high-k Bi-based pyrochlore dielectrics grown at room temperature
  • Seong, Nak-Jin ; 
  • Jung, Hyun-June ; 
  • Yoon, Soon-Gil
  • 2011-04
  • Seong, Nak-Jin. (2011-04). Bismuth-metal nanocrystals self-embedded in high-k Bi-based pyrochlore dielectrics grown at room temperature. Physica Status Solidi A: Applications and Materials Science, 208(4), 932–936. doi: 10.1002/pssa.201026226
  • Wiley Blackwell
  • View : 776
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Article
Debye Length and Active Layer Thickness-Dependent Performance Variations of Amorphous Oxide-Based TFTs
  • Jeong, J[Jeong, Jaewook] ; 
  • Hong, Y[Hong, Yongtaek]
  • 2012-03
  • Jeong, J[Jeong, Jaewook]. (2012-03). Debye Length and Active Layer Thickness-Dependent Performance Variations of Amorphous Oxide-Based TFTs. doi: 10.1109/TED.2011.2180908
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 828
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Article
Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors
  • 2011-08
  • Son, Dae-Ho. (2011-08). Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors. Thin Solid Films, 519(20), 6815–6819. doi: 10.1016/j.tsf.2011.04.079
  • Elsevier
  • View : 784
  • Download : 0

Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode

Article
Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode
  • Kim, Joonwoo ; 
  • Myung, Sung ; 
  • Noh, Hee-Yeon ; 
  • Jeong, Soon Moon ; 
  • Jeong, Jaewook
  • 2015-09
  • AIP Advances, v.5, no.9
  • American Institute of Physics Publishing
  • View : 1026
  • Download : 78
Article
High performance and the low voltage operating InGaZnO thin film transistor
  • 2010-11
  • Son, Dae-ho. (2010-11). High performance and the low voltage operating InGaZnO thin film transistor. Current Applied Physics, 10(4), E157–E160. doi: 10.1016/j.cap.2010.03.012
  • Elsevier B.V.
  • View : 921
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Article
Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment
  • 2015-11
  • Japanese Journal of Applied Physics, v.54, no.11
  • Institute of Physics Publishing
  • View : 900
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Article
Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature
  • Song, Ju-Il ; 
  • Park, Jae-Soung ; 
  • Kim, Howoon ; 
  • Heo, Young-Woo ; 
  • Lee, Joon-Hyung ; 
  • Kim, Jeong-Joo ; 
  • Kim, G. M. ; 
  • Choi, Byeongdae
  • 2007-01
  • Song, Ju-Il. (2007-01). Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature. doi: 10.1063/1.2430917
  • American Institute of Physics
  • View : 772
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