<?xml version="1.0" encoding="UTF-8"?>
<feed xmlns="http://www.w3.org/2005/Atom" xmlns:dc="http://purl.org/dc/elements/1.1/">
  <title>Repository Collection: null</title>
  <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/1139" />
  <subtitle />
  <id>https://scholar.dgist.ac.kr/handle/20.500.11750/1139</id>
  <updated>2026-04-15T19:36:21Z</updated>
  <dc:date>2026-04-15T19:36:21Z</dc:date>
  <entry>
    <title>Identifying Structural Defects During Driving Electronic Devices</title>
    <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/6271" />
    <author>
      <name />
    </author>
    <id>https://scholar.dgist.ac.kr/handle/20.500.11750/6271</id>
    <updated>2025-07-24T07:28:56Z</updated>
    <published>2018-01-10T15:00:00Z</published>
    <summary type="text">Title: Identifying Structural Defects During Driving Electronic Devices
Abstract: DGIST research team discovered the blocking phenomenon of electrons generated during high-speed driving of oxide semiconductors and proved its causes for the first time in the world</summary>
    <dc:date>2018-01-10T15:00:00Z</dc:date>
  </entry>
</feed>

