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  <title>Repository Collection: null</title>
  <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/11854" />
  <subtitle />
  <id>https://scholar.dgist.ac.kr/handle/20.500.11750/11854</id>
  <updated>2026-04-05T12:49:43Z</updated>
  <dc:date>2026-04-05T12:49:43Z</dc:date>
  <entry>
    <title>High-Performance Monolithic 3D CMOS Enabled by Orientation-Aligned Seedless Laser Crystallization and Ultra-Shallow Laser Activation</title>
    <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/58919" />
    <author>
      <name>Park, Jongyoun</name>
    </author>
    <author>
      <name>Jeong, Heejae</name>
    </author>
    <author>
      <name>Park, Euyjin</name>
    </author>
    <author>
      <name>Park, Geuntae</name>
    </author>
    <author>
      <name>Ahn, Chunghyun</name>
    </author>
    <author>
      <name>Lee, Sangsu</name>
    </author>
    <author>
      <name>Kwon, Hyuk-Jun</name>
    </author>
    <author>
      <name>Yu, Hyun-Yong</name>
    </author>
    <id>https://scholar.dgist.ac.kr/handle/20.500.11750/58919</id>
    <updated>2025-08-19T05:40:10Z</updated>
    <published>2025-06-11T15:00:00Z</published>
    <summary type="text">Title: High-Performance Monolithic 3D CMOS Enabled by Orientation-Aligned Seedless Laser Crystallization and Ultra-Shallow Laser Activation
Author(s): Park, Jongyoun; Jeong, Heejae; Park, Euyjin; Park, Geuntae; Ahn, Chunghyun; Lee, Sangsu; Kwon, Hyuk-Jun; Yu, Hyun-Yong
Abstract: In this study, we demonstrate PSLC Si-based CMOS devices on the M3D top layer using a seedless crystallization process. Laser crystallization forms single-orientation Si channels (25 μ m grain size), enhancing carrier mobility. Laser S/D activation achieves low contact resistivity (∼ 10-8 Ω· cm2) below 400 °C, meeting M3D constraints. PSLC-Si CMOS devices exhibit I&lt;inf&gt;ON&lt;/inf&gt;/I&lt;inf&gt;OFF&lt;/inf&gt; &gt; 108 with high μ&lt;inf&gt;FE&lt;/inf&gt;,e(521 cm2/V· s) and μ&lt;inf&gt;FE,h&lt;/inf&gt; (163 cm2/V· s). CMOS inverters show clear switching transitions, confirming feasibility for M3D logic applications. These results validate the potential of a fully laser-based process for M3D-integrated logic devices. Keyword: Monolithic 3D (M3D), Patterned Seedless Laser-Crystallization (PSLC), Si, Laser activation, Mobility © 2025 Elsevier B.V., All rights reserved.</summary>
    <dc:date>2025-06-11T15:00:00Z</dc:date>
  </entry>
  <entry>
    <title>Next Generation Electronics with Pulsed Laser Processing</title>
    <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/47132" />
    <author>
      <name>Kwon, Hyuk Jun</name>
    </author>
    <id>https://scholar.dgist.ac.kr/handle/20.500.11750/47132</id>
    <updated>2025-07-25T03:31:57Z</updated>
    <published>2017-09-14T15:00:00Z</published>
    <summary type="text">Title: Next Generation Electronics with Pulsed Laser Processing
Author(s): Kwon, Hyuk Jun</summary>
    <dc:date>2017-09-14T15:00:00Z</dc:date>
  </entry>
  <entry>
    <title>Flexible/Wearable Electronics with 2D Materials and Pulsed Laser Processing</title>
    <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/47043" />
    <author>
      <name>Kwon, Hyuk Jun</name>
    </author>
    <id>https://scholar.dgist.ac.kr/handle/20.500.11750/47043</id>
    <updated>2025-07-25T02:39:42Z</updated>
    <published>2017-11-15T15:00:00Z</published>
    <summary type="text">Title: Flexible/Wearable Electronics with 2D Materials and Pulsed Laser Processing
Author(s): Kwon, Hyuk Jun</summary>
    <dc:date>2017-11-15T15:00:00Z</dc:date>
  </entry>
  <entry>
    <title>Conceptual design of mniniature tunable stiffness display using MR fluids</title>
    <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/1870" />
    <author>
      <name>Yang, Tae Heon</name>
    </author>
    <author>
      <name>Kwon, Hyuk-Jun</name>
    </author>
    <author>
      <name>Lee, Seung Sup</name>
    </author>
    <author>
      <name>An, Jinung</name>
    </author>
    <author>
      <name>Koo, Jeong Hoi</name>
    </author>
    <author>
      <name>Kim, Sang Youn</name>
    </author>
    <author>
      <name>Kwon, Dong Soo</name>
    </author>
    <id>https://scholar.dgist.ac.kr/handle/20.500.11750/1870</id>
    <updated>2025-07-24T07:22:46Z</updated>
    <published>2009-06-22T15:00:00Z</published>
    <summary type="text">Title: Conceptual design of mniniature tunable stiffness display using MR fluids
Author(s): Yang, Tae Heon; Kwon, Hyuk-Jun; Lee, Seung Sup; An, Jinung; Koo, Jeong Hoi; Kim, Sang Youn; Kwon, Dong Soo
Abstract: Stiffness information is one of the important factors to naturally and intuitively interact with electronic devices and displays. For small-sized electronics, such as hand-held devices, the size of haptic modules is a key limiting factor, and it must be minimized. This paper proposes a concept of miniature and tunable stiffness display an aim to design a miniature device conveying stiffness information. The proposed device is based on Magneto-Rheological(MR) fluids, and its stiffness can be varied by activating the MR fluids with the magnetic field produced by the solenoid, . The proposed stiffness display is composed of three main parts such as an elastic returning part (providing elastic force), a stiffness tuning part (generating resistive force), and a PDMS membrane reservoir part (serving as a repository for the MR fluids). The use of MR fluids in the haptic display allows us to miniature it by eliminating bulky electrical and mechanical components in conventional haptic devices. ©2009 IEEE.</summary>
    <dc:date>2009-06-22T15:00:00Z</dc:date>
  </entry>
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