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  <title>Repository Collection: null</title>
  <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/251" />
  <subtitle />
  <id>https://scholar.dgist.ac.kr/handle/20.500.11750/251</id>
  <updated>2026-04-04T13:10:19Z</updated>
  <dc:date>2026-04-04T13:10:19Z</dc:date>
  <entry>
    <title>대량양극산화 기술을 활용한 다공성 침 제조방법</title>
    <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/59857" />
    <author>
      <name>인수일</name>
    </author>
    <id>https://scholar.dgist.ac.kr/handle/20.500.11750/59857</id>
    <updated>2026-02-28T17:40:42Z</updated>
    <summary type="text">Title: 대량양극산화 기술을 활용한 다공성 침 제조방법
Author(s): 인수일
Abstract: 본 발명은 대량양극산화 기술을 활용한 다공성 침 제조방법에 관한 것으로, 침을 대량양극산화공정을 이용하여 침의 표면에 다공성 구조를 쉽고 빠르게 형성되도록 하고, 침의 끝부분을 실리콘 코팅처리하여 피부 삽입 시 통증이 적고 인체에 무해한 다공성 침 제조 방법에 관한 것이다.</summary>
  </entry>
  <entry>
    <title>NEGATIVE ELECTRODE FOR BETA VOLTAA CELL AND METHOD FOR MANUFACTURING SAME</title>
    <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/58825" />
    <author>
      <name>이준호</name>
    </author>
    <author>
      <name>김홍수</name>
    </author>
    <author>
      <name>황윤주</name>
    </author>
    <author>
      <name>손삼익</name>
    </author>
    <author>
      <name>인수일</name>
    </author>
    <id>https://scholar.dgist.ac.kr/handle/20.500.11750/58825</id>
    <updated>2025-07-30T03:10:11Z</updated>
    <summary type="text">Title: NEGATIVE ELECTRODE FOR BETA VOLTAA CELL AND METHOD FOR MANUFACTURING SAME
Author(s): 이준호; 김홍수; 황윤주; 손삼익; 인수일
Abstract: A negative electrode for a beta volt cell and a method of making the negative electrode are described. In the negative electrode, quantum dots including radioisotopes are provided to the radiation absorber so as to be introduced as a beta source.</summary>
  </entry>
  <entry>
    <title>Semiconductor memory and method of manufacturing the same</title>
    <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/58703" />
    <author>
      <name>김대희</name>
    </author>
    <author>
      <name>김홍수</name>
    </author>
    <author>
      <name>황윤주</name>
    </author>
    <author>
      <name>박영호</name>
    </author>
    <author>
      <name>인수일</name>
    </author>
    <id>https://scholar.dgist.ac.kr/handle/20.500.11750/58703</id>
    <updated>2025-07-25T03:36:20Z</updated>
    <summary type="text">Title: Semiconductor memory and method of manufacturing the same
Author(s): 김대희; 김홍수; 황윤주; 박영호; 인수일
Abstract: In a semiconductor memory of the invention, the source or drain of a transfer gate MOS transistor is electrically connected to a charge storage first conductive layer through a third conductive layer.</summary>
  </entry>
  <entry>
    <title>POROUS ACUPUNCTURE NEEDLE PLATED WITH NOBLE METAL NANOPARTICLES AND MANUFACTURING METHOD THEREFOR</title>
    <link rel="alternate" href="https://scholar.dgist.ac.kr/handle/20.500.11750/58699" />
    <author>
      <name>인수일</name>
    </author>
    <author>
      <name>최한샘</name>
    </author>
    <id>https://scholar.dgist.ac.kr/handle/20.500.11750/58699</id>
    <updated>2025-08-12T09:10:39Z</updated>
    <summary type="text">Title: POROUS ACUPUNCTURE NEEDLE PLATED WITH NOBLE METAL NANOPARTICLES AND MANUFACTURING METHOD THEREFOR
Author(s): 인수일; 최한샘
Abstract: The present invention relates to a porous acupuncture needle and a manufacturing method therefor and, more specifically, to: a porous acupuncture needle plated with porous needle-integrated noble metal nanoparticles, obtained by manufacturing a porous acupuncture needle having micro-sized or nano-sized holes formed on the surface of an acupuncture needle and having a maximized specific surface area, and then forming noble metal nanoparticles on the needle surface such as the inside and/or surrounding area of the holes of the porous acupuncture needle; and a method for manufacturing the same.</summary>
  </entry>
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