https://scholar.dgist.ac.kr/handle/20.500.11750/1135 2026-04-16T21:31:29Z https://scholar.dgist.ac.kr/handle/20.500.11750/47173 Title: Emission control of multilayered thin films of ZnOCuO prepared by pulsed laser deposition Author(s): Lyu, Hong-Kun; Allabergenov, Bunyod; Shim, Hyunseok; Lee, Myoung-Jae; Choi, Byeongdae Abstract: In this report, we present on a research result of the microstructural and optical properties of ZnO/CuO multilayered films. Three types of multilayer ZnO/CuO stacks were prepared by pulsed laser deposition (PLD) on amorphous SiO2/Si substrates, and then annealed at 500oC for 30 min to improve crystallinity. TEM and XRD analysis of the thin films revealed the formation of multiple crystallographic defects and modification of the dominant growth plane. Consequently, near-band-edge emission in ZnO can be controlled through the number of CuO layers. The detailed microstructure and electro optical properties of multilayered ZnO/CuO thin films will be discussed. 2017-08-07T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/47019 Title: Frequency-Modulation-Induced Broad Color-tuning in Elastomer-based Electroluminescent Devices Author(s): Song, Seongkyu; Shim, Hyunseok; Lim, Sang Kyoo; Jeong, Soon Moon 2017-11-27T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/10118 Title: Electrical characterization of graphene source/drain electrodes in amorphous indium-gallium-zinc-oxide thin-film transistors subjected to plasma treatment in contact regions Author(s): Jeong, Jaewook; Kim, Joonwoo Abstract: In this paper, the electrical characteristics of a-IGZO TFTs with graphene source/drain (S/D) electrodes subjected to argon plasma treatment are analyzed. Depending on the channel length (L), the a-IGZO TFTs showed parasitic resistance dominant (L < 30 μm) and channel conduction dominant regions (L ≥ 30 μm). Using the transmission line method, the intrinsic parameters were extracted. The intrinsic field-effect mobility was about 9.79 cm2 V-1 s-1 and the width-normalized parasitic resistance value was about 460 Ωcm, which are comparable with those of a-IGZO TFTs having S/D plasma-treated regions with no contact metal. Temperature-dependent measurement indicates that the graphene electrodes affected the thermally deactivated behavior of the a-IGZO TFTs, which is different from the case of a-IGZO TFTs having conventional metal electrodes. © 2019 The Japan Society of Applied Physics. 2019-06-30T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/9989 Title: High-Speed and Low-Temperature Atmospheric Photo-Annealing of Large-Area Solution-Processed IGZO Thin-Film Transistors by Using Programmable Pulsed Operation of Xenon Flash Lamp Author(s): Jo, Jeong-Wan; Kim, Kyung-Tae; Park, Ho-Hyun; Park, Sung Kyu; Heo, Jae Sang; Kim, Insoo; Lee, Myoung-Jae Abstract: An efficient photo-annealing approach for high-performance solution-processed metal-oxide thin film transistors (TFTs) was demonstrated by using programmable pulse operation of xenon flash lamp. The flash lamp annealing (FLA) process could offer not only low-temperature (≈100° C) processing but also ultra-fast annealing speed of the order of seconds under air ambient conditions. Solution-processed amorphous indium-gallium-zinc-oxide (α-IGZO) TFTs implemented by the FLA process typically exhibited much improved electrical performance such as saturation mobility of >10.8 cm2V−11s−1, ION/IOPP of >108, and subthreshold slope of as steep as 0.24 V/dec. X-ray photoelectron spectroscopy analysis of a-IGZO films indicates that the FLA can provide sufficient activation energy for rapid formation of solid a-IGZO bonds within 30 s. The high-quality metal-oxide films achieved by an atmospheric and low temperature FLA method may represent a significant advance for scalable fabrication of flexible and printed metal-oxide electronics. © 2019, The Korean Physical Society. 2019-05-31T15:00:00Z