https://scholar.dgist.ac.kr/handle/20.500.11750/11852 2026-04-05T06:27:32Z https://scholar.dgist.ac.kr/handle/20.500.11750/60141 Title: 금속 산화물 반도체의 제조방법, 이를 통해 제조된 금속 산화물 반도체(METHOD FOR MANUFACTURING A METAL OXIDE SEMICONDUCTOR AND A METAL OXIDE SEMICONDUCTOR MANUFACTURED THEREBY) Author(s): 권혁준; 김준일; 양규원 Abstract: 본 발명은 금속 산화물 반도체의 전기적 및 광학적 특성을 향상시키기 위한 기술에 관한 것으로, 도핑원소 공급층과의 계면에서 선택적 도핑을 유도하기 위해 레이저 조사 공정을 수행한다. 본 발명은 레이저 파워를 정밀하게 제어함으로써, 도핑원소를 금속 산화물 반도체 내로 선택적으로 확산시켜 p형 전도 특성을 구현하고, 동시에 산소 공공(oxygen vacancy)의 농도 및 밴드 구조를 조절할 수 있도록 한다. 도핑원소가 확산된 금속 산화물 반도체는 정공 캐리어 농도가 증가된 전도 특성을 나타내며, 밸런스된 궤도 혼성화 및 밴드갭 축소를 통해 우수한 정공 이동도와 함께 안정적인 동작을 구현한다. https://scholar.dgist.ac.kr/handle/20.500.11750/60031 Title: Achieving wide-range steep slopes in SnS2 negative capacitance transistors through an isolated band structure and thermionic emission enhancement via Bi contacts Author(s): Song, Chong-Myeong; Park, Jaewoo; Lee, Shinbuhm; Kwon, Hyuk-Jun Abstract: Negative capacitance FETs aim for sub-60 mV dec-1 switching to curb power consumption, but often encounter instability and narrow steep-slope windows. We present a hysteresis-free NCFET that strategically utilizes a 2D SnS2 channel. The inherent isolated conduction band of SnS2, yielding a step-like density of states, is pivotal for sharp turn-on characteristics when effectively coupled with the negative capacitance effect. The SnS2 channel is integrated with an La:HfO2/HfO2 ferroelectric-dielectric gate stack and Bi contacts. This architecture shows an average subthreshold swing of 34 mV dec-1 across four current decades, maintaining sub-60 mV dec-1 operation over this wide range, and enabling sub-0.4 V operation. Bi contact is key, minimizing Fermi-level pinning at the SnS2/metal interface. This expands the thermionic emission region, allowing the negative capacitance to fully leverage the distinct properties of SnS2 for sustained wide-range steep-slope performance. This work demonstrates a novel approach to ultralow-power transistors by integrating an isolated-band semiconductor, optimized ferroelectric, and contact engineering. 2025-11-30T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/59975 Title: Materials Horizons Emerging Investigator Series: Professor Hyuk-Jun Kwon, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, Republic of Korea Author(s): Kwon, Hyuk-Jun Abstract: Our Emerging Investigator Series features exceptional work by early-career researchers working in the field of materials science. 2025-11-30T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/59973 Title: High-Spatiotemporal-Resolution Transparent Thermoelectric Temperature Sensor Arrays Reveal Temperature-Dependent Windows for Reversible Photothermal Neuromodulation Author(s): Lee, Junhee; Yoon, Dongjo; Lee, Jungha; Kim, Duhee; Kim, Eunui; Yoon, Jong-Hyeok; Kwon, Hyuk-Jun; Chung, Seungjun; Nam, Yoonkey; Kang, Hongki Abstract: Photothermal neural stimulation enables optical excitation or inhibition of neural activity depending on the dynamics of localized temperature changes, offering high spatial resolution without genetic modification. However, quantitative analysis of these temperature dynamics remains limited due to the lack of suitable direct sensing technologies, posing a challenge to the safe and controlled application of photothermal neural stimulation techniques. This challenge is addressed by developing transparent thermoelectric temperature sensor arrays with high spatiotemporal resolution, integrated with electrical and optical recording capabilities. These microscale sensors stably and accurately capture rapid temperature increases and decreases, and thermal equilibrium induced by thermo-plasmonic effects at the neural interface, regardless of the environment. The multifunctional platform allows simultaneous electrical and optical monitoring of neural responses during the photothermal stimulation, enabling detailed analysis of the correlation between localized temperature changes and neural activities. a reversible neural inhibition window (1.4-4.5 degrees C) and thresholds for irreversible damage (>6.1 degrees C) are identifyed. Using high temporal-resolution sensing, localized thermo-plasmonic temperature dynamics over tens of milliseconds, and associated neural signal suppression and reactivation are captured. This approach provides unprecedented insight into the interplay between photothermal effects and neural activity, establishing a foundation for precise, temperature-guided neuromodulation therapies and advanced neural circuit research. 2026-01-31T15:00:00Z