https://scholar.dgist.ac.kr/handle/20.500.11750/119 2026-08-08T12:23:40Z https://scholar.dgist.ac.kr/handle/20.500.11750/60573 Title: 전기 자극 기반 촉각 모사 시스템 Author(s): 신연재; 장재은; 강홍기; 이정협; 위정윤 Abstract: 여러 개의 전극을 이용해 전기 자극을 제공하여 신체 내의 뉴런 수용체에 전달함으로서, 촉각을 모사할 수 있는 촉각 모사 장치가 개시된다. 촉각 모사 장치는 사용자의 상태에 따라 전기 신호 파형의 세기, 펄스 형태 등을 달리하여 사용자의 통증 유발을 최소화할 수 있으며, 인체에 해가 될 수 있는 전류를 제한하여 사용자가 안전하게 촉각 모사 장치를 이용할 수 있다. https://scholar.dgist.ac.kr/handle/20.500.11750/60571 Title: 모놀리식 3차원 적층 구조 기반의 전계 효과 트랜지스터 활성화를 위한 유전체 및 채널 박막 레이저 열처리를 이용하여 강유전체 전계 효과 트랜지스터를 제조하는 방법 Author(s): 김동수; 권혁준; 장재은; 정희재 https://scholar.dgist.ac.kr/handle/20.500.11750/60546 Title: Inkjet-Printed BaTiO3 Nanoparticle-Embedded Capacitor Array for Physical Unclonable Function Author(s): Hong, Woongki; Bissannagari, Murali; Cho, Youngjae; Jang, Jae Eun; Kwon, Hyuk-Jun; Kang, Hongki Abstract: Nanoparticle (NP)-based physical unclonable functions (PUFs) have attracted attention as a digital fingerprint technology that alternates with microfabrication-based PUFs by utilizing natural randomness at the nanoscale. Mostly NP-based optical PUFs have been proposed due to the absence of nanomaterial fabrication method compatible with microelectronics, but the need for a bulky optical readout system makes it difficult to utilize them in microelectronics. In this work, we developed the NP-based capacitor PUF (CAP-PUF) technology that can be read electrically and integrated into microelectronics while utilizing the benefit of the natural physical randomness of NPs. We incorporated a high-k BaTiO3 NP inkjet printing micropatterning process for the fabrication of the NP-embedded CAP-PUF array. The inkjet-printing parameters have been optimized to maximize the natural randomness of the BaTiO3 NP micropatterns by increasing the intrinsic stochasticity, especially the fluid dynamics that occurring during the multilayer printing. The BaTiO3 NP-embedded CAP-PUF array shows high security performance, showing the inter-hamming distance of 0.52, uniformity of 0.44, entropy of 0.989, and intra-hamming distance up to 0.064. High-k NP inkjet-printing-based CAP-PUFs can provide highly unique digital fingerprints based on the intrinsic randomness in nanoscale for microelectronics. 2026-05-31T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/60480 Title: Laser-Induced Oxygen Engineering for Localized Homojunction Formation in SnS2 Photodetectors Author(s): Lee, Jieun; Kim, Junil; Sim, Young-Jun; Lee, Byeongmoon; Jang, Jae Eun; Kwon, Hyuk-Jun Abstract: The development of high-performance optoelectronic devices based on 2D materials has attracted significant attention. However, conventional vertical stacking methods are limited by complex processes and interfacial defects. To overcome these challenges, we propose a simple and efficient one-step process to form an in-plane homojunction within a single n-type tin disulfide (SnS2) flake via direct laser irradiation. The core process, oxidative thinning, utilizes a focused 532 nm laser to locally convert a portion of SnS2 into tin oxide (SnOx). Consequently, an energy barrier arising from a work-function difference of approximately 0.7 eV is formed at the interface, promoting the separation of photogenerated electron-hole pairs. The fabricated photodetector demonstrates a fast response time (tau r/tau f = 474/299 ms), an improvement of several tens of times compared with the pristine SnS2 device. Furthermore, it exhibits a high responsivity (R) of 703 mA W-1, an external quantum efficiency (EQE) of 170%, and a remarkable specific detectivity (D*) of 2.35 x 1014 Jones, along with excellent operational stability. This laser-induced local conversion technique presented can provide a powerful and practical platform for developing next-generation flexible and wearable optoelectronic devices. 2026-04-30T15:00:00Z