https://scholar.dgist.ac.kr/handle/20.500.11750/1195 2026-04-04T12:10:40Z https://scholar.dgist.ac.kr/handle/20.500.11750/60121 Title: Efficient Dynamic Scene Editing via 4D Gaussian-based Static-Dynamic Separation Author(s): Kwon, Joohyun; Cho, Hanbyel; Kim, Junmo Abstract: Recent 4D dynamic scene editing methods require editing thousands of 2D images used for dynamic scene synthesis and updating the entire scene with additional training loops, resulting in several hours of processing to edit a single dynamic scene. Therefore, these methods are not scalable with respect to the temporal dimension of the dynamic scene (i.e., the number of timesteps). In this work, we propose Instruct-4DGS, an efficient dynamic scene editing method that is more scalable in terms of temporal dimension. To achieve computational efficiency, we leverage a 4D Gaussian representation that models a 4D dynamic scene by combining static 3D Gaussians with a Hexplane-based deformation field, which captures dynamic information. We then perform editing solely on the static 3D Gaussians, which is the minimal but sufficient component required for visual editing. To resolve the misalignment between the edited 3D Gaussians and the deformation field, which may arise from the editing process, we introduce a refinement stage using a score distillation mechanism. Extensive editing results demonstrate that Instruct-4DGS is efficient, reducing editing time by more than half compared to existing methods while achieving high-quality edits that better follow user instructions. 2025-06-14T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/60090 Title: Atomic Layer Deposited Highly Conductive Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects Author(s): Park, Chaehyun; Kweon, Minjeong; Mohapatra, Debananda; Cheon, Taehoon; Bae, Jong-Seong; Jeong, Daeyoon; Park, Young-Bae; Kim, Soo-Hyun Abstract: Achieving precise thickness control and producing noncorrosive byproducts are critical for developing effective semiconductor diffusion barrier. Although atomic layer deposition (ALD) is widely employed for conformal thin films, its application to niobium carbide (NbC) remains underexplored. This study presents the plasma-enhanced ALD (PEALD) of highly conductive NbCx films using a novel metal-organic Nb precursor and H-2 plasma. By optimizing deposition conditions, oxygen incorporation was minimized (similar to 5 at.%), which strengthened Nb-C bonding and lowered resistivity to below 100 mu Omega-cm. Density functional theory (DFT) calculations confirmed that residual O-2 and H2O promote oxygen incorporation, whereas increased plasma power and temperature facilitate Nb-O bond dissociation and generate carbon sources, resulting in carbon-rich, highly conductive NbCx films. Finally, the ultrathin NbCx (2.6 nm) film functioned as both a diffusion barrier and adhesion layer, suppressing Cu diffusion up to 500 degrees C and Ru diffusion up to 900 degrees C, and concurrently enhancing interfacial adhesion in both Cu and Ru metallization. 2025-06-02T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/60089 Title: Improved Properties of Atomic Layer Deposited Ru Films by Providing Additional Reactant for Cu Alternative Nanoscale Interconnects Author(s): Kim, Jeongha; Mohapatra, Debananda; Son, Yeseul; Jang, Jae Min; Kim, Sang Bok; Cheon, Taehoon; Shong, Boggeun; Kim, Soo-Hyun Abstract: This study designed the ABC-type Ru ALD process using 02 and NH3 consecutively as counter-reactants to achieve a low resistivity of 13.4 u Omega center dot cm and superior film properties, including enhanced crystallinity. Compared to conventional AB-type Ru films, this process resulted in improved properties, with grain size increasing from 12 nm to 25 nm, impurity concentration decreasing from 1.5 at.% to 0.3 at.%, and surface roughness reducing from 2.0 nm to 1.2 nm. To investigate the effect of the additional reactant gas NH3, machine-learning potential (MLP) analysis was performed. The results revealed that NH3 dissociatively adsorbs on the Ru surface, generating atomic hydrogen, which reduces surface oxygen and removes 0 and C impurities. Fuchs-Sondheimer (FS) and Mayadas-Shatzkes (MS) modeling demonstrated that grain size significantly impacts resistivity, while the influence of surface scattering is relatively minor. These findings suggest that NH3 plays a crucial role in improving Ru film properties in the ABC-type Ru ALD process, highlighting its potential for next-generation Cu replacement interconnect applications. 2025-06-03T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/60088 Title: Plasma-Enhanced Atomic Layer Deposition of Yttrium Carbide Thin Films as a Promising Transition Metal Carbide for Dual Diffusion Barrier in Cu and Ru Metallization Author(s): Kweon, Minjeong; Park, Chaehyun; Mohapatra, Debananda; Kim, Sang Bok; Bae, Jong-Seong; Cheon, Taehoon; Kim, Soo-Hyun Abstract: Transition metal carbides (TMCs) possess superior properties compared to transition metal nitrides (TMNs). However, despite their advantages, atomic layer deposition (ALD) and plasma-enhanced ALD (PEALD) techniques for these materials, particularly yttrium carbide (YCx), have not been thoroughly investigated. This study introduces a PEALD approach for fabricating high-quality YCx thin films with excellent uniformity and precise thickness control. With a focus on their potential as advanced diffusion barriers, the research employs a metal-organic Y precursor in combination with H-2 plasma to produce highly crystalline, low-resistivity YCx films. To refine the deposition process, critical parameters such as temperature (ranging from 150 degrees C to 350 degrees C), precursor pulse time, and plasma exposure duration were carefully optimized. Under these conditions, the film exhibited a growth rate of similar to 0.13 nm per cycle at 250 degrees C. Structural and compositional analysis using advanced microscopy and spectroscopic techniques confirmed the formation of a nanocrystalline rhombohedral phase, a C-to-Y atomic ratio of similar to 0.46, and a film density of 4.63 g/cm(3). Furthermore, the deposited films demonstrated exceptional step coverage of 95% within a trench structure with an aspect ratio of similar to 1.5 and a bottom width of 265 nm. Post-annealing studies revealed that the films maintained their thermal and crystallographic stability between 500 degrees C and 800 degrees C. Additionally, the YCx films effectively functioned as a dual diffusion barrier for Cu and Ru (40 nm), exhibiting thermal stability up to 900 degrees C. These results underscore the potential of YCx films for applications in advanced semiconductor technologies. 2025-06-03T15:00:00Z