https://scholar.dgist.ac.kr/handle/20.500.11750/15731 2026-04-04T12:10:38Z https://scholar.dgist.ac.kr/handle/20.500.11750/59882 Title: LC회로를 이용한 위상절연 양자메모리 Author(s): 브라이언 B. 조; 김영욱; 정민경 Abstract: 본 발명은 LC회로를 이용한 위상절연 양자메모리에 관한 것이다. 본 발명의 목적은, 위상절연에 의한 영에너지 상태를 이용하여 양자정보를 저장 및 회수할 수 있도록 하는, LC회로를 이용한 위상절연 양자메모리를 제공함에 있다. 보다 상세하게는, 초전도체 기판으로 이루어지는 LC회로 격자를 이용하여 위상상태(topological state) 원자체인을 모사구현하고, 이를 양자정보를 저장하는 구조로서 활용하는, LC회로를 이용한 위상절연 양자메모리를 제공함에 있다. https://scholar.dgist.ac.kr/handle/20.500.11750/59294 Title: Radio-Frequency Detection of Fabry–Pérot Interference and Quantum Capacitance in Long-Channel Three-Dimensional Dirac Semimetal Cd3As2Nanowires Author(s): An, Sung Jin; Kim, Jisu; Jung, Myung-chul; Park, Kidong; Park, Jeunghee; Shim, Seung-bo; Kim, Hakseong; Siu, Zhuo Bin; Jalil, Mansoor B.A.; Schönenberger, Christian; Myoung, Nojoon; Seo, Jungpil; Jung, Minkyung Abstract: We demonstrate phase-coherent transport in suspended long-channel Cd3As2 nanowire devices using both direct current (DC) transport and radiofrequency (RF) reflectometry measurements. By integrating Cd3As2 nanowires with on-chip superconducting LC resonators, we achieve sensitive detection of both resistance and quantum capacitance variations. In a long-channel device (L ≈ 1.8 μm), clear Fabry–Pérot (FP) interference patterns are observed in both DC and RF measurements, providing strong evidence for ballistic electron transport. RF reflectometry reveals gate-dependent modulations of the resonance frequency arising from quantum capacitance oscillations induced by changes in the density of states and FP interference. These oscillations exhibit a quasi-periodic structure that closely correlates with the FP patterns in DC transport measurements. In another device of a Cd3As2 nanowire Josephson junction (L ≈ 730 nm, superconducting Al contacts), FP interference patterns are too weak to be resolved in DC conductance but are detectable using RF reflectometry. These results demonstrate the high quality of our Cd3As2 nanowires and the versatility of RF reflectometry, establishing their potential for applications in topological quantum devices such as Andreev qubits or gatemon architectures. 2025-09-30T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/57352 Title: Enhanced magnetization by defect-assisted exciton recombination in atomically thin CrCl3 Author(s): Zhang, Xin-Yue; Graham, Thomas K. M.; Bae, Hyeonhu; Wang, Yu-Xuan; Delegan, Nazar; Ahn, Jonghoon; Wang, Zhi-Cheng; Regner, Jakub; Watanabe, Kenji; Taniguchi, Takashi; Jung, Minkyung; Sofer, Zdeněk; Tafti, Fazel; Awschalom, David D.; Heremans, F. Joseph; Yan, Binghai; Zhou, Brian B. Abstract: Two-dimensional semiconductors present unique opportunities to intertwine optical and magnetic functionalities and to tune these performances through defects and dopants. Here, we integrate exciton pumping into a quantum sensing protocol on nitrogen-vacancy centers in diamond to image the optically induced transient stray fields in few-layer, antiferromagnetic CrCl3. We discover that exciton recombination enhances the in-plane magnetization of the CrCl3 layers, with a predominant effect in the surface monolayers. Concomitantly, time-resolved photoluminescence measurements reveal that nonradiative exciton recombination intensifies in atomically thin CrCl3 with tightly localized, nearly dipole-forbidden excitons and amplified surface-to-volume ratio. Supported by experiments under controlled surface exposure and density functional theory calculations, we interpret the magnetically enhanced state to result from a defect-assisted Auger recombination that optically activates electron transfer between water vapor related surface impurities and the spin-polarized conduction band. Our work validates defect engineering as a route to enhance intrinsic magnetism in single magnetic layers and opens an experimental platform for studying optically induced, transient magnetism in condensed matter systems. © 2024 American Physical Society. 2024-09-30T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/56907 Title: 복수의 공진기를 포함하는 양자 메모리 Author(s): 브라이언 B. 조; 김태희; 정민경