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        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60596" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60580" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60577" />
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    <dc:date>2026-08-10T12:33:06Z</dc:date>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60596">
    <title>Self-Powered ZnSnN2/GaN Photodiodes via Fine Stoichiometry Control and Photon Trapping Micropatterned Heterojunctions Under Low-Light Irradiation</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60596</link>
    <description>Title: Self-Powered ZnSnN2/GaN Photodiodes via Fine Stoichiometry Control and Photon Trapping Micropatterned Heterojunctions Under Low-Light Irradiation
Author(s): Kim, Jeong Hyeon; Hwang, Ju Chan; Yoon, Soon Joo; Lee, Yoon Kyueng; Lee, Taehun; Min, Jungwook; Kim, Jongmin; Park, Kwangwook; Lee, Haneol
Abstract: Recent advances in energy-autonomous optoelectronic devices have attracted significant attention for next-generation applications. However, developing compound semiconductor-based self-powered photodiodes remains challenging due to difficulties in precise band alignment control and limited light absorption efficiency. Here, we demonstrate a self-powered photodiode based on a ZnSnN2 (ZTN)/GaN heterostructure, featuring an enhanced built-in electric field via fine stoichiometry control and light-trapping micropatterned heterojunctions. Through stoichiometric engineering, the ZTN thin-film exhibited an optimized carrier concentration of 3.34 &amp; times; 1019 cm-3 and a bandgap of 2.27 eV. Consequently, the heterostructure achieved a strong built-in electric field of 88 kV cm-1 due to the degenerate n-type properties of ZTN. To further reinforce light absorption, we introduced periodic microhole patterns, and the resulting micropatterned heterojunction exhibited a substantial carrier lifetime of 6.2 ns, representing a 1.8-fold enhancement over the thin-film structure. Finally, the device demonstrated robust power-saving operation under zero-bias conditions, successfully driving a commercial temperature/humidity sensor. Moreover, the device exhibited a linear dynamic range of 15.1 dB and stable linearity (theta approximate to 0.27) even under low-light conditions, ensuring reliable operation in varying illumination environments. These results suggest that our dual approach of stoichiometric and structural engineering offers a scalable pathway for next-generation self-powered optoelectronic systems.</description>
    <dc:date>2026-06-30T15:00:00Z</dc:date>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60580">
    <title>페로브스카이트 화합물을 포함하는 고분자 전해질막 연료전지용 첨가제 및 이를 포함하는 고분자 전해질막 연료전지</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60580</link>
    <description>Title: 페로브스카이트 화합물을 포함하는 고분자 전해질막 연료전지용 첨가제 및 이를 포함하는 고분자 전해질막 연료전지
Author(s): 박주안; 유현진; 박권주; 한다빈; 상가라쥬샨무감</description>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60577">
    <title>마이크로 캡슐의 위치선택적 분포 제어 방법</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60577</link>
    <description>Title: 마이크로 캡슐의 위치선택적 분포 제어 방법
Author(s): 이민규; 이현태; 김민욱; 김종백; 송영탁; 홍종섭; 이홍경; 임민홍
Abstract: 본 발명은 (a) 마이크로 캡슐을 포함하는 혼합물을 제조하는 단계, (b) 분포제어부가 물리장을 혼합물 또는 혼합물로 제조된 1차 가공물로 제공하여 마이크로 캡슐의 정렬을 유도하는 단계 및 (c) 마이크로 캡슐이 물리장에 의해 위치선택적으로 분포되어 정렬되는 단계를 포함하는 것을 특징으로 하는 마이크로 캡슐의 위치선택적 분포 제어 방법을 제공한다.</description>
  </item>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60576">
    <title>전고체 이차전지</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60576</link>
    <description>Title: 전고체 이차전지
Author(s): 박주남; 신동옥; 이용민; 이명주; 김주영; 이영기; 김주미; 김광만; 오지민; 강석훈
Abstract: The present disclosure relates to an all-solid-state secondary battery, and more particularly, to an all-solid-state secondary battery including a positive electrode, a negative electrode, and a solid electrolyte layer disposed between the positive electrode and the negative electrode. Here, at least one of the positive electrode and the negative electrode includes a sulfide-based active material, the sulfide-based active material has a particle size of about 50 nm to about 5 µm, and the sulfide-based active material has a grain size of about 1 nm to about 10 nm.</description>
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