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    <title>Repository Community: null</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/207</link>
    <description />
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        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60248" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60247" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60230" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60215" />
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    <dc:date>2026-04-22T18:22:08Z</dc:date>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60248">
    <title>리튬이차전지 양극 슬러리, 리튬이차전지 양극 슬러리 제조 방법, 리튬이차전지 양극, 리튬이차전지</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60248</link>
    <description>Title: 리튬이차전지 양극 슬러리, 리튬이차전지 양극 슬러리 제조 방법, 리튬이차전지 양극, 리튬이차전지
Author(s): 이준기; 김고은; 반성호; 이윤성; 이현태; 이홍경
Abstract: Disclosed are, inter alia, a positive electrode slurry containing reduced content of a binder, a method of preparing the positive electrode slurry, a positive electrode made from the slurry and a lithium secondary battery including the positive electrode.</description>
  </item>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60247">
    <title>희생금속 입자 함유 기체확산층을 포함하는 막전극접합체 및 이를 포함하는 연료전지</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60247</link>
    <description>Title: 희생금속 입자 함유 기체확산층을 포함하는 막전극접합체 및 이를 포함하는 연료전지
Author(s): 신철환; 유종성
Abstract: 본 발명은 희생금속 입자 함유 기체확산층을 포함하는 막전극접합체에 관한 것이다. 본 발명의 일 구현예에 따르면, 제1촉매층 및 제1기체확산층을 포함하는 캐소드, 제2촉매층 및 제2기체확산층을 포함하는 애노드 및 상기 캐소드와 상기 애노드 사이에 배치된 고분자 전해질막을 포함하고, 상기 제1촉매층은 활성금속 입자를 포함하며, 상기 제1기체확산층은 제1기체확산층용 지지체 및 상기 제1기체확산층용 지지체 상에 담지되고 활성금속 대신 산화되는 희생금속 입자를 포함하는 것을 특징으로 하는, 막전극접합체를 제공한다.</description>
  </item>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60230">
    <title>Next-Generation Quantum Dot Engineering for Photoelectrochemical Hydrogen Production: Insights From Artificial Intelligence-Assisted Approaches</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60230</link>
    <description>Title: Next-Generation Quantum Dot Engineering for Photoelectrochemical Hydrogen Production: Insights From Artificial Intelligence-Assisted Approaches
Author(s): Lee, Hyo Cheol; In, Su-Il
Abstract: The transition to sustainable energy requires efficient technologies for solar-driven hydrogen production. Quantum dots (QDs), with size-tunable bandgaps and favorable interfacial properties, significantly enhance photoelectrochemical (PEC) water splitting by enabling broad-spectrum light harvesting, optimized band alignment, and improved charge separation. However, QD design strategies for PEC systems remain less developed compared to those for light-emitting diodes and solar cells, constrained by incomplete understanding of interfacial photophysics, limited exploration of low-dimensional nanocrystals (1D/2D), and the absence of AI-assisted optimization. This review provides a comprehensive overview of material design strategies for QDs in PEC hydrogen production, encompassing fundamental principles, established approaches, and recent advances in both heavy-metal-based and nontoxic systems. Particular attention is given to emerging paradigms such as dimensional control and AI-driven optimization, which enable predictive modeling, accelerated synthesis, and performance tuning beyond conventional trial-and-error methods. Finally, we address critical challenges—including stability, toxicity, and scalability—and outline future directions for achieving efficient, sustainable QD-based PEC systems suitable for practical and economically viable commercialization.</description>
    <dc:date>2025-12-31T15:00:00Z</dc:date>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60215">
    <title>Advances in Photopatterning of Quantum Dots: Mechanisms, Materials, and Device Applications</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60215</link>
    <description>Title: Advances in Photopatterning of Quantum Dots: Mechanisms, Materials, and Device Applications
Author(s): Lee, Namji; Taylor Derrick Allan; Choi, Donghyun; Kwak, Do-Hyun; Lee, Jong-Soo
Abstract: The precise patterning of quantum dots (QDs) is crucial for integrating advanced optoelectronic devices, including quantum dot light-emitting diodes (QLEDs) and photodetectors. However, conventional patterning techniques often suffer from poor film uniformity and degradation of the optical and electronic properties of QDs. Recently, direct optical lithography has emerged as a powerful alternative, enabling high-resolution patterning while better preserving QD integrity. In this review, we summarize the representative photopatterning mechanisms, including ligand exchange, ligand cross-linking, ligand decomposition, and ligand desorption and discuss the associated material considerations, including QDs, surface ligands, and charge-transport layers. We further highlight recent breakthroughs in applying these strategies to QLEDs and photodetectors. Finally, we outline the remaining challenges - including solubility control, industrial scalability, photodamage mitigation, and the optimization of processing conditions - and propose potential strategies for enhancing patterning quality, device performance, and manufacturability.</description>
    <dc:date>2026-01-31T15:00:00Z</dc:date>
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