<?xml version="1.0" encoding="UTF-8"?>
<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns="http://purl.org/rss/1.0/" xmlns:dc="http://purl.org/dc/elements/1.1/">
  <channel rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/229">
    <title>Repository Community: null</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/229</link>
    <description />
    <items>
      <rdf:Seq>
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/59064" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/58943" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/58944" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/58735" />
      </rdf:Seq>
    </items>
    <dc:date>2026-04-05T13:26:28Z</dc:date>
  </channel>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/59064">
    <title>코어-쉘 나노와이어의 제조 방법 및 이를 통해 제조된 코어-쉘 나노와이어</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/59064</link>
    <description>Title: 코어-쉘 나노와이어의 제조 방법 및 이를 통해 제조된 코어-쉘 나노와이어
Author(s): 이윤구; 김민경; 김종윤
Abstract: 본 발명은 코어-쉘 나노와이어의 제조 방법 및 이를 통해 제조된 코어-쉘 나노와이어를 개시한다. 본 발명은 이차원 양자점 용액에 금속 나노와이어 분산액을 첨가하여 금속 나노와이어 코어 표면에 이차원 양자점 쉘이 형성된 제1 코어-쉘 나노와이어를 제조하는 단계; 상기 제1 코어-쉘 나노와이어를 용매에 첨가하여 제1 코어-쉘 나노와이어 분산액을 제조하는 단계; 상기 제1 코어-쉘 나노와이어 분산액을 기판 상에 코팅하여 제1 코어-쉘 나노와이어 막을 형성하는 단계; 및 상기 제1 코어-쉘 나노와이어 막에 극단파 백색광(intense pulsed light, IPL)을 조사하여 제2 코어-쉘 나노와이어를 포함하는 제2 코어-쉘 나노와이어 막을 제조하는 단계;를 포함하고, 상기 극단파 백색광(intense pulsed light, IPL)은 상기 제1 코어-쉘 나노와이어의 결정성을 조절하여 상기 제2 코어-쉘 나노와이어를 제조하는 것을 특징 으로 한다.</description>
  </item>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/58943">
    <title>Boosting Efficiency and Longevity of Quantum Dot Light-Emitting Diodes with Dibenzofuran-Incorporated Hole Transport Materials Featuring High Bond Dissociation Energy</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/58943</link>
    <description>Title: Boosting Efficiency and Longevity of Quantum Dot Light-Emitting Diodes with Dibenzofuran-Incorporated Hole Transport Materials Featuring High Bond Dissociation Energy
Author(s): Hwang, Youngjun; Jung, Hyeonwoo; Kim, Jongyoun; Lee, Dongwoo; Lee, Youngu
Abstract: The intrinsic degradation of quantum dot light-emitting diodes (QLEDs) is often attributed to the insufficient stability of hole transport materials (HTMs), which adversely affects both efficiency and operational lifetime. Despite efforts to address this issue, HTMs with high bond dissociation energy (BDE) for enhanced QLED performance remain underdeveloped. Here, a series of dibenzofuran (DBF)-incorporated HTMs with high BDE is synthesized to improve QLED efficiency and longevity. Among them, poly(9,9-dioctylfluorene-co-N,N-diphenyldibenzo[b,d]furan-1-amine) (1-PFDBF) exhibits superior hole mobility, high BDE, extended exciton lifetime, and reduced trap density. Green QLEDs employing 1-PFDBF achieve a maximum external quantum efficiency (EQEmax) of 25.71%, a maximum current efficiency of 102.98 cd A(-)(1), and a maximum power efficiency of 75.69 lmW(-)(1), significantly outperforming poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)diphenylamine) (TFB)-based QLEDs. Notably, the EQEmax of 1-PFDBF-based green QLEDs ranks among the highest for devices utilizing triarylamine-based HTMs. Furthermore, the operational half-lifetime of the 1-PFDBF-based QLEDs is approximate to 15 900 h at 1 000 cd m(-)2 and approximate to 1 460 000 h at 100 cd m(-)2, making a significant increase of 3 600% and 6 600%, respectively, compared to TFB-based QLEDs. These findings establish DBF incorporation as an effective strategy for enhancing HTM BDE and hole mobility, optimizing charge balance within QLEDs, and ultimately enabling high-efficiency and long-lasting QLEDs.</description>
    <dc:date>2025-08-31T15:00:00Z</dc:date>
  </item>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/58944">
    <title>Anisotropic Dynamic Disorder of π-Stacking and Static Disorder in Organic Electron Transporting Materials with Isomorphic Crystal Structures</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/58944</link>
    <description>Title: Anisotropic Dynamic Disorder of π-Stacking and Static Disorder in Organic Electron Transporting Materials with Isomorphic Crystal Structures
Author(s): Lee, Chae-Won; Puc, Uros; Lee, Jeong Hyeon; Cho, Na Young; Lee, Jong Bum; Lee, Yun-Sang; Kim, Jin Chul; Yoon, Woojin; Yun, Hoseop; Jang, Seokhoon; Lee, Youngu; Kim, Jong H.; Kwak, Sang Kyu; Jazbinsek, Mojca; Kwon, O-Pil
Abstract: In organic semiconductors, charge transport is strongly correlated with intermolecular π–π interactions and the dynamic disorder caused by solid-state phonon vibrations. However, for pure π–π stacking of semiconducting cores, solid-state phonon vibrations and their directional characteristics are relatively unexplored. In this work, solid-state phonon vibrations using experimental and theoretical phonon-resolved analyses of single crystals are studied, for which a series of organic electron-transporting naphthalene diimide (NDI) analogs as a model system is designed. The three NDI analogs in this series exhibit isomorphic crystal structures with a brickwork-type assembly characterized by pure face-to-face π–π stacking, but different π–π stacking distances. The as-grown NDI single crystals exhibit strong anisotropic phonon vibrations, with substantial differences observed between the directions parallel and perpendicular to the π–π stacking, appearing in two distinct THz frequency ranges (below and above 7 THz). These vibrations originate from the out-of-plane and in-plane movements of the NDI cores, respectively. For vacuum-deposited polycrystalline films, despite having isomorphic crystal structures with equivalent dominant (001) facets, the static disorder, which is influenced by crystalline perfection and trap density, varied markedly among the three NDI analogs.</description>
    <dc:date>2025-08-31T15:00:00Z</dc:date>
  </item>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/58735">
    <title>에틸렌에 대한 생산성이 향상된 이산화탄소 전기화학적 전환 촉매 및 이를 포함하는 이산화탄소 전환용 흐름전지</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/58735</link>
    <description>Title: 에틸렌에 대한 생산성이 향상된 이산화탄소 전기화학적 전환 촉매 및 이를 포함하는 이산화탄소 전환용 흐름전지
Author(s): 남대현; 김종윤; 이윤구; 이태민
Abstract: 본 발명은 구리 나노 와이어를 포함하는 코어부; 및 상기 코어부를 감싸며, 그래핀 양자점 및 환원제를 포함하는 시스부;를 포함하고, 상기 환원제는 상기 그래핀 양자점과 결합을 통해 구리 나노 와이어에 고정된 것인, 이산화탄소 전기화학적 전환 촉매 및 상기 촉매를 포함하는 이산화탄소 전환용 흐름전지에 관한 것으로, 높은 생산성으로 이산화탄소로부터 에틸렌을 제조할 수 있으며, 촉매의 내구성 및 수명을 향상시키는 효과를 제공할 수 있다.</description>
  </item>
</rdf:RDF>

