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        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/59857" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/58825" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/58703" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/58699" />
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    <dc:date>2026-04-04T13:10:27Z</dc:date>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/59857">
    <title>대량양극산화 기술을 활용한 다공성 침 제조방법</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/59857</link>
    <description>Title: 대량양극산화 기술을 활용한 다공성 침 제조방법
Author(s): 인수일
Abstract: 본 발명은 대량양극산화 기술을 활용한 다공성 침 제조방법에 관한 것으로, 침을 대량양극산화공정을 이용하여 침의 표면에 다공성 구조를 쉽고 빠르게 형성되도록 하고, 침의 끝부분을 실리콘 코팅처리하여 피부 삽입 시 통증이 적고 인체에 무해한 다공성 침 제조 방법에 관한 것이다.</description>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/58825">
    <title>NEGATIVE ELECTRODE FOR BETA VOLTAA CELL AND METHOD FOR MANUFACTURING SAME</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/58825</link>
    <description>Title: NEGATIVE ELECTRODE FOR BETA VOLTAA CELL AND METHOD FOR MANUFACTURING SAME
Author(s): 이준호; 김홍수; 황윤주; 손삼익; 인수일
Abstract: A negative electrode for a beta volt cell and a method of making the negative electrode are described. In the negative electrode, quantum dots including radioisotopes are provided to the radiation absorber so as to be introduced as a beta source.</description>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/58703">
    <title>Semiconductor memory and method of manufacturing the same</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/58703</link>
    <description>Title: Semiconductor memory and method of manufacturing the same
Author(s): 김대희; 김홍수; 황윤주; 박영호; 인수일
Abstract: In a semiconductor memory of the invention, the source or drain of a transfer gate MOS transistor is electrically connected to a charge storage first conductive layer through a third conductive layer.</description>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/58699">
    <title>POROUS ACUPUNCTURE NEEDLE PLATED WITH NOBLE METAL NANOPARTICLES AND MANUFACTURING METHOD THEREFOR</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/58699</link>
    <description>Title: POROUS ACUPUNCTURE NEEDLE PLATED WITH NOBLE METAL NANOPARTICLES AND MANUFACTURING METHOD THEREFOR
Author(s): 인수일; 최한샘
Abstract: The present invention relates to a porous acupuncture needle and a manufacturing method therefor and, more specifically, to: a porous acupuncture needle plated with porous needle-integrated noble metal nanoparticles, obtained by manufacturing a porous acupuncture needle having micro-sized or nano-sized holes formed on the surface of an acupuncture needle and having a maximized specific surface area, and then forming noble metal nanoparticles on the needle surface such as the inside and/or surrounding area of the holes of the porous acupuncture needle; and a method for manufacturing the same.</description>
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