https://scholar.dgist.ac.kr/handle/20.500.11750/253 2026-04-21T22:19:57Z https://scholar.dgist.ac.kr/handle/20.500.11750/58992 Title: 이중 도핑된 안정화 비스무트 산화물을 포함하는 고체산화물 전지용 복합 산소 전극 Author(s): 강석범; 이종준; 조동우; 이강택; 최도영; 김경준; 김대원; 윤병현 Abstract: 본 발명은 디스프로슘(Dy) 및 이트륨(Y)이 이중 도핑된 안정화 비스무트 산화물(DYSB) 및 산소 전극재료가 포함된 복합 산소 전극을 제공한다. 상기 DYSB를 산소 전극의 성분으로 하는 고체산화물 전지(SOC)는 중간 온도의 연료 전지 모드에서 매우 높은 성능을, 전기 분해 모드에서 뛰어난 가역적 안정성 및 우수한 내구성을 가질 수 있다. https://scholar.dgist.ac.kr/handle/20.500.11750/58436 Title: 스피넬 구조 산화물을 포함하는 고체산화물 연료전지용 캐소드 물질 Author(s): 김경준; 이종준; 정인철; 이강택; Imdadullah Thaheem; 조동우 Abstract: 본 발명은 망간 코발트 산화물(MCO)에 구리가 도핑되고, 하기의 화학식 1로 표시되는 스피넬 구조 산화물을 포함하는 고체산화물 연료전지용 캐소드 물질을 제공한다: [화학식 1] Mn1.5-0.5xCo1.5-0.5xCuxO4 (상기 식에서, x는 0 003c# x ≤ 0.5 임) https://scholar.dgist.ac.kr/handle/20.500.11750/56686 Title: 고체산화물 연료 전지용 연결재, 이의 제조방법 및 이를 포함하는 고체 산화물 연료 전지 Author(s): 조동우; 이헌형; 전도연; 최광욱; 이강택; Imdadullah Thaheem; 노태민; 임상혁 Abstract: The present specification relates to a connecting material for a solid oxide fuel cell, a manufacturing method thereof, and a solid oxide fuel cell comprising same, the connecting material comprising:a conductive substrate; and a ceramic protective film provided on one surface of the conductive substrate, wherein the ceramic protective film includes an oxide represented by chemical formula (1). https://scholar.dgist.ac.kr/handle/20.500.11750/56372 Title: Defect chemistry of highly defective La0.1Sr0.9Co0.8Fe0.2O3-Delta by considering oxygen interstitials Author(s): Im, Ha Ni; Singh, Bhupendra P.; Hong, Jae Woon; Kim, In Ho; Lee, Kang Taek; Song, Sun Ju Abstract: In case of highly defective perovskite oxides such as La0.1Sr0.9Co0.8Fe0.2O3-δ (LSCF1982), the ionic defect has been in question by suggesting direct oxygen ion diffusion by considering lattice oxygen site as an interstitial rather than an oxygen vacancy. In the present study, the thermomigration of ionic defect species was measured by ionic thermopower measurement to provide strong evidence of interstitial diffusion and the defect structure was further analyzed in terms of effectively negatively charged oxygen interstitial as a charge-compensating defect against hole. Two kinds of holes-delocalized and localized at B-site cations; were investigated by defect chemical analysis. From the conductivity analysis based on the non-stoichiometry results, the contributions of delocalized holes, localized hole at Co site, localized hole at Fe site, and localized hole moving from Co site to Fe site were successfully separated, and it was observed that the hopping reaction involving hole localized at Co is dominant in conductivity mechanism. The measurement of electronic thermopower further confirms the involvement of two different types of holes in p-type conduction. © 2016 The Electrochemical Society. All rights reserved. 2015-12-31T15:00:00Z