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    <title>Repository Community: null</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/371</link>
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        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60322" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60316" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60309" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/60256" />
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    <dc:date>2026-05-21T20:33:04Z</dc:date>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60322">
    <title>비휘발성 메모리 소자 및 이의 구동 방법</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60322</link>
    <description>Title: 비휘발성 메모리 소자 및 이의 구동 방법
Author(s): 이현준
Abstract: A non-volatile memory device according to various embodiments of the present invention is characterized in that the non-volatile memory device includes a substrate, a first electrode disposed on the substrate, an insulating layer contacting the first electrode, a semiconductor layer contacting the insulating layer, and a second electrode contacting the semiconductor layer, and is driven using an asymmetrical local energy state (ALES) induced in the semiconductor layer under the condition that at least a portion of the first electrode contacts the semiconductor layer. A method of driving the non-volatile memory device in accordance with various embodiments of the present invention includes inducing an asymmetrical local energy state (ALES) generated due to instantaneous acceleration of electrons injected into the semiconductor layer, and removing the ALES from the semiconductor layer, for recovery of the semiconductor layer.</description>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60316">
    <title>약물 전달 디바이스</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60316</link>
    <description>Title: 약물 전달 디바이스
Author(s): 이지훈; 양승운; 박석호</description>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60309">
    <title>Cu Nanoparticle Infiltration via Metal-Organic Decomposition Ink for Superior Mass Activity in CO Electroreduction</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60309</link>
    <description>Title: Cu Nanoparticle Infiltration via Metal-Organic Decomposition Ink for Superior Mass Activity in CO Electroreduction
Author(s): Choi, Juhyung; Park, Sejin; Kim, Dayeon; Kim, Hyun Chul; Yun, Hyewon; Hong, Yewon; An, Hyun Ji; Lee, Taemin; Lee, Noho; Kim, Jaeeun; Nam, Dae-Hyun; Oh, Hyung-Suk; Hwang, Yun Jeong
Abstract: Achieving stable operation at high currents remains challenging for gas diffusion electrode (GDE)-based CO electrolyzers. Herein, we demonstrate the importance of Cu nanoparticle infiltration into the microporous layer to enrich local CO accessibility and mitigate electrolyte crossover. A facile GDE preparation method is developed via the doctor-blading method using a Cu metal-organic decomposition (Cu MOD) ink to produce well-dispersed nanoparticles across the porous layer. This design produces highly selective C2+ products at -1200 mA cm-2 from the CO electroreduction reaction, achieving a remarkably high mass activity of approximately -28,000 A g-1. It is found that the Cu electrodes prepared by MOD improve a stable balanced gas-liquid-solid interface by CO transport across the hydrophobic microenvironment of the inherent microporous layer. Our insights offer perspectives on a scalable strategy for optimizing catalyst positioning and advancing stable GDEs with high mass activity.</description>
    <dc:date>2025-09-30T15:00:00Z</dc:date>
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  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/60256">
    <title>AI를 이용한 일회박출량 산출 장치 및 방법</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/60256</link>
    <description>Title: AI를 이용한 일회박출량 산출 장치 및 방법
Author(s): 양현림; 이형철; 김민수; 정철우</description>
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