https://scholar.dgist.ac.kr/handle/20.500.11750/70 2026-04-04T14:14:11Z https://scholar.dgist.ac.kr/handle/20.500.11750/3619 Title: The role of porous graphite plate for high quality SiC crystal growth by PVT method Author(s): Shin, Hee Won; Lee, Hee Jun; Kim, Hwang Ju; Lee, Dong Hoon; Park, Mi Seon; Jang, Yeon Suk; Lee, Won Jae; Yeo, Im Gyu; Chun, Myong Chuel; Lee, Si Hyun; Kim, Jung Gon Abstract: The present research is focused to investigate a role of the porous graphite (PG) plate that could improve the quality of 4H-SiC crystal. The grown crystal in PG inserted crucible showed the lower intensity of Al, B and Ti impurity concentration than SiC crystal grown in conventional crucible. The PG plate before and after the growth process has been investigated by a Raman spectroscopy and a photoluminescence spectrum (PL). According to the analysis result, it was confirmed that the porous graphite plate had the effect of suppressing impurities supplied to SiC single crystal during the growth process. © 2016 Trans Tech Publications, Switzerland. 2015-12-31T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/3708 Title: Effect of porous graphite for high quality SiC crystal growth by PVT method Author(s): Lee, H.-J.; Lee, H.-T.; Shin, H.-W.; Park, M.-S.; Jang, Y.-S.; Lee, W.-J.; Yeo, I.-G.; Eun, T.-H.; Kim, J.-Y.; Chun, M.-C.; Lee, S.-H.; Kim, J.-G. Abstract: The effect of the porous graphite plate above the source material on properties of silicon carbide (SiC) crystals grown by Physical Vapor Transport method has been investigated. The porous graphite plate was inserted on source powder to produce a more C-rich for the polytype stability of 4H-SiC crystal and a uniform radial temperature gradient. The dendrite structure obtained from SiC source powder in the crucible with porous graphite plate was more densely formed than that in the conventional crucible. The crystal quality of 4H-SiC single crystals grown in porous graphite inserted crucible was revealed to be better than that of crystal grown SiC crystals in the conventional crucible. © (2015) Trans Tech Publications, Switzerland. 2014-12-31T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/3709 Title: Effect of various crucibles for high quality AlN crystal growth on SiC seed by PVT method Author(s): Lee, H.-J.; Lee, H.-T.; Shin, H.-W.; Park, M.-S.; Jang, Y.-S.; Lee, W.-J.; Kim, D.-Y.; Hong, S.-K.; Kim, J.-G. Abstract: Aluminum nitride (AlN) bulk crystals, approximately 50.8mm in diameter and up to 5mm thickness, were grown by a physical vapor transport (PVT) method in a tantalum crucible. To investigate the effect of crucible materials, various crucible materials, a graphite and TaC-coated graphite and tantalum crucible were used for the AlN growth. XRD pattern of AlN crystal grown on SiC seed in the Ta-crucible exhibited only (00l) peaks, indicating that AlN single crystal was successfully grown on SiC seed. The interface structure between AlN and SiC crystals was observed by a high resolution TEM. © (2015) Trans Tech Publications, Switzerland. 2014-12-31T15:00:00Z