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  <channel rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/831">
    <title>Repository Collection: null</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/831</link>
    <description />
    <items>
      <rdf:Seq>
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/58509" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/57887" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/57699" />
        <rdf:li rdf:resource="https://scholar.dgist.ac.kr/handle/20.500.11750/56797" />
      </rdf:Seq>
    </items>
    <dc:date>2026-04-04T14:59:00Z</dc:date>
  </channel>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/58509">
    <title>Electrical modulation of spin-orbit torque efficiencies in electric-double-layer gated Pt/Co/Pt trilayer</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/58509</link>
    <description>Title: Electrical modulation of spin-orbit torque efficiencies in electric-double-layer gated Pt/Co/Pt trilayer
Author(s): 이수범; 안수혁; 백은총; 조재용; 김동률; 유천열
Abstract: Spin current electrically generated via spin-orbit coupling exerts so-called spin-orbit torque onto ferromagnetic materials. Until now, much effort has been devoted to engineering spin-orbit torque by modifying film  structure. In  this  method,  however,  spin-orbit  torque  could  not  be  controlled  after  the  device  fabrication.  Despite  the versatile  applications  of  spin-orbit  torque  in  manipulating  magnetic  materials,  the  absence  of  dynamic  tunability for  spin-orbit  torque  has  constrained  the  potential  for  constructing  spin-orbit  torque-based  logic  gates[1]. Furthermore,  dynamic  control  of  spin-orbit  torque  provides  a  novel  function  for  the  future  spin-orbit  torque devices.  Here  we  focus  on  the  electric  double  layer  created  at  a  polarized  electrolyte/channel  surface,  which enables  a  tunable  spin-charge  interconversion  in  ultrathin  Pt  films  through  the  utilization  of  an  electric  double layer[2].  In  this  study,  we  report  the  electrical  modulation  of  spin-orbit  torque  efficiencies  using electric-double-layer gating in a Pt/Co/Pt trilayer system with Ta seed layer, where the opposing spin-orbit torques from the top and bottom Pt layers cancel out each other. Harmonic Hall measurements with electric-double-layer gating  reveal  that  the  damping-like  torque  efficiency  is  switched  on  or  off,  as  shown in  Fig. 1.  A  more  detailed discussion  will  be  given  in  the  presentation.</description>
    <dc:date>2023-11-22T15:00:00Z</dc:date>
  </item>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/57887">
    <title>Improved the conductivity of PEDOT:PSS by magnetic field for bio-electrode applications</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/57887</link>
    <description>Title: Improved the conductivity of PEDOT:PSS by magnetic field for bio-electrode applications
Author(s): Doe, Juha; Choi, Hyeokjoo; Lee, Sungwon; You, Chun-Yeol
Abstract: Poly(3,4-ehtylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is a mixture of two ionomers. Especially, its conductive polymer PEDOT is well-known conductive polymer widely utilized for organic and stretchable device fabrication. However, PEDOT:PSS itself is not conductive polymer owing to another ionomer PSS so that pretreatment is necessary to enable PEDOT. Recently, it is found that hydrothermal (HT) treatment significantly increases the activity of PEDOT:PSS up to 250 times [1]. Also, this treatment has advantages in that it is compatible with biological environments since it doesn’t leave organic solution or strong acid. Here, we introduce additional improvement of PEDOT:PSS activation, more than twice, applying magnetic field over hydrothermal treatment. We also exhibit analysis of molecular structure with Raman spectroscopy, XPS, and GIWAXS. The results shows enhanced attraction force between PEDOT:PSS and water molecules.</description>
    <dc:date>2024-05-30T15:00:00Z</dc:date>
  </item>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/57699">
    <title>Effect of sputtering power on the magnetic properties in Pt/Co system for spin-orbit torque devices</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/57699</link>
    <description>Title: Effect of sputtering power on the magnetic properties in Pt/Co system for spin-orbit torque devices
Author(s): Cho, Jae Yong; Baek, Eunchong; An, Suhyeok; Lee, Soobeom; You, Chun-Yeol
Abstract: As CMOS integration continues to advance, the semiconductor industry faces several challenges. Spintronics has emerged as a promising technology to go “beyond CMOS” and overcome these limitations.[1] Spintronics is a field of research that ut ilizes not just electron charge but also electron spin, introducing a new degree of freedom. The key materials employed in spintronics predominantly consist of magnetic materials. Although there are wide variety of categories in magnetic materials, perpendicular magnetic anisotropy (PMA) which prefer magnetization alignment perpendicular to the film plane gets significant notice because of its advantage in terms of information density.[2] To control these magnetic elements, techniques like spin-transfer torque (STT) and spin-orbit torque (SOT) are utilized. Notably, the SOT method offers the advantage of high speed and is gaining attention in various devices.[3]To improve better SOT devices, researchers aim to manipulate the material properties of magnetic materials using a range of methods.[4] In particular, there are several research exploring how variations in sputtering power can influence material properties.[5][6] Given this, we hypothesized that altering the sputtering power would likewise lead to changes in the physical properties of the magnetic material. In this report, we investigate the impact of the deposition power of the Co layer on the material properties in the Pt/Co bilayer structure, which is a representative system exhibiting PMA characteristics and controllable through SOT. The structure was deposited using a magnetron DC sputtering method on an oxidized silicon substrate with a thickness of 300 nm. Sputtering power was varied from 40W to 80W at 10W intervals. We confirmed how this variation in deposition power affects magnetic anisotropy. We believe that this research holds significant potential for advancing the development of spintronic SOT based devices that rely on PMA.</description>
    <dc:date>2023-11-21T15:00:00Z</dc:date>
  </item>
  <item rdf:about="https://scholar.dgist.ac.kr/handle/20.500.11750/56797">
    <title>Spin wave dynamics in epitaxial antiferromagnetic α-Fe₂O₃ thin film prepared by pulsed laser deposition method</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/56797</link>
    <description>Title: Spin wave dynamics in epitaxial antiferromagnetic α-Fe₂O₃ thin film prepared by pulsed laser deposition method
Author(s): Kim, Soo-Jung; Ha, Jae-Hyun; Baek, Eunchong; Kim, Jun-Su; Hong, Jung-Il; You, Chun-Yeol
Abstract: Spin  wave  dynamics  in  antiferromagnetic  materials,  which  has  large  group  velocity  (over  20  km/s)  and  long diffusion  length  (up  to  10  μm),  is  getting  more  attention  in  many  fields.  [1-2]  Especially,  the  α-Fe2O3,  which has  high  bulk  Dzyaloshinskii-Moriya  interaction  (DMI),  low  Gilbert  damping  constant  (~10-5)  and  relatively  low resonance  frequency  (tens  to  hundreds  of  GHz  frequency)  than  other  antiferromagnetic  materials  (over  THz frequency), is emerging as a promising material recently. [3-5] However, the relevant spin wave dynamics studies are  mostly  dealing  with  the  bulk  single  crystal  structure,  which  shows  considerably  different  characteristics  in epitaxial  thin  film  structure.In this study, we investigate the unique characteristics of spin wave dynamics in the α-Fe2O3 thin film at room temperature.  The  sample  is  deposited  by  using  pulsed  laser  deposition  (PLD)  system  with  85  nm  of  epitaxial Fe2O3 on the c-plane Al2O3 substrate. We confirm the crystallinity by X-ray diffractometer (XRD) and check the magnetic  properties  using  SQUID-VSM.  To  measure  the  special  features  of  spin  wave  dynamics  in  the  α-Fe2O3 thin  film,  we  used  ferromagnetic  resonance  (FMR)  and  micro-Brillouin  light  scattering  (μBLS).  We  detect  the unexpected  low  frequency  mode  (f-)  and  multiple  peaks  of  BLS  signal  which  could  be  the  clue  of  the  new properties.  Our  results  can  widen  the  insight  of  the  spin  wave  dynamics  in  the  thin  film  α-Fe2O3  and  the  usage  in  the  antiferromagnetic  spintronics  applications.</description>
    <dc:date>2023-11-21T15:00:00Z</dc:date>
  </item>
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