<?xml version="1.0" encoding="UTF-8"?>
<rss xmlns:dc="http://purl.org/dc/elements/1.1/" version="2.0">
  <channel>
    <title>Repository Collection: null</title>
    <link>https://scholar.dgist.ac.kr/handle/20.500.11750/1139</link>
    <description />
    <pubDate>Wed, 15 Apr 2026 19:36:21 GMT</pubDate>
    <dc:date>2026-04-15T19:36:21Z</dc:date>
    <item>
      <title>Identifying Structural Defects During Driving Electronic Devices</title>
      <link>https://scholar.dgist.ac.kr/handle/20.500.11750/6271</link>
      <description>Title: Identifying Structural Defects During Driving Electronic Devices
Abstract: DGIST research team discovered the blocking phenomenon of electrons generated during high-speed driving of oxide semiconductors and proved its causes for the first time in the world</description>
      <pubDate>Wed, 10 Jan 2018 15:00:00 GMT</pubDate>
      <guid isPermaLink="false">https://scholar.dgist.ac.kr/handle/20.500.11750/6271</guid>
      <dc:date>2018-01-10T15:00:00Z</dc:date>
    </item>
  </channel>
</rss>

