https://scholar.dgist.ac.kr/handle/20.500.11750/15732 Wed, 11 Nov 2026 11:27:12 GMT 2026-11-11T11:27:12Z https://scholar.dgist.ac.kr/handle/20.500.11750/60993 Title: Gate-Reconfigurable Single- and Double-Dot Transport in Trilayer MoSe2 Author(s): Lee, Seungwoo; Park, Minjun; 노윤상; An, Sung Jin; Kim, Soyun; 조민서; Kim, Dohun; Taniguchi, Takashi; Watanabe, Kenji; Jung, Minkyung; Kim, Youngwook Abstract: We report gate-controlled quantum-dot transport in a trilayer MoSe2 device that combines a graphite back gate beneath the active region, a separate global gate for conductive access regions, and local top finger gates. In the low-backgate regime, bias spectroscopy shows regular Coulomb-blockade diamonds characteristic of single-dot transport. As backgate is increased, additional low-bias structure develops beyond a simple single-dot pattern, indicating that the electrostatic landscape is reshaped and that a second dot becomes active in transport. In the higher-backgate regime, plunger-gate tuning and two-gate measurements establish a gate-reconfigurable double-dot configuration with two non-equivalent dots whose relative alignment and interdot coupling evolve with gate voltage. These results indicate that trilayer MoSe2 supports electrically reconfigurable single- and double-dot transport in the present device architecture. Mon, 31 Aug 2026 15:00:00 GMT https://scholar.dgist.ac.kr/handle/20.500.11750/60993 2026-08-31T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/60420 Title: Quantized Conductance through Surface States in High Quality Three-Dimensional Dirac Semimetal Cd3As2 Nanowire/Nanoribbon p-n Junctions Author(s): An, Sungjin; Siu, Zhuo Bin; Kaladzhyan, Vardan; Bardarson, Jens H.; Lee, Sunghun; Lee, Myoung-Jae; Park, Kidong; Park, Jeunghee; Jalil, Mansoor B. A.; Seo, Jungpil; Jung, Minkyung Abstract: We report the observation of quantized conductance in high-mobility three-dimensional Dirac semimetal Cd3As2 nanowire and nanoribbon p-n junctions. By employing suspended device geometries with dual local gates, we form tunable p-n junctions and realize ballistic transport across sub-micron channel lengths. In a wide nanoribbon device with a channel width of similar to 330 nm, conductance plateaus appear at integer multiples of 2e(2)/h in the n-n regime under high magnetic fields. Numerical simulations suggest that these features represent unresolved spin split subbands due to the smaller subband spacing in wider channels and support the interpretation that the observed quantization may originate from surface-state-dominated conduction. In contrast, narrower nanoribbons and nanowires exhibit conductance steps of 1e(2)/h, demonstrating spin-resolved subbands likely due to enhanced confinement effects. From spin-resolved subband spectroscopy, we extract an effective Land & eacute; g-factor of similar to 43 for the first subband in the bulk gap, establishing these nanostructures as a prospective platform for fault-tolerant quantum electronics. Sun, 31 May 2026 15:00:00 GMT https://scholar.dgist.ac.kr/handle/20.500.11750/60420 2026-05-31T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/59294 Title: Radio-Frequency Detection of Fabry–Pérot Interference and Quantum Capacitance in Long-Channel Three-Dimensional Dirac Semimetal Cd3As2Nanowires Author(s): An, Sung Jin; Kim, Jisu; Jung, Myung-chul; Park, Kidong; Park, Jeunghee; Shim, Seung-bo; Kim, Hakseong; Siu, Zhuo Bin; Jalil, Mansoor B.A.; Schönenberger, Christian; Myoung, Nojoon; Seo, Jungpil; Jung, Minkyung Abstract: We demonstrate phase-coherent transport in suspended long-channel Cd3As2 nanowire devices using both direct current (DC) transport and radiofrequency (RF) reflectometry measurements. By integrating Cd3As2 nanowires with on-chip superconducting LC resonators, we achieve sensitive detection of both resistance and quantum capacitance variations. In a long-channel device (L ≈ 1.8 μm), clear Fabry–Pérot (FP) interference patterns are observed in both DC and RF measurements, providing strong evidence for ballistic electron transport. RF reflectometry reveals gate-dependent modulations of the resonance frequency arising from quantum capacitance oscillations induced by changes in the density of states and FP interference. These oscillations exhibit a quasi-periodic structure that closely correlates with the FP patterns in DC transport measurements. In another device of a Cd3As2 nanowire Josephson junction (L ≈ 730 nm, superconducting Al contacts), FP interference patterns are too weak to be resolved in DC conductance but are detectable using RF reflectometry. These results demonstrate the high quality of our Cd3As2 nanowires and the versatility of RF reflectometry, establishing their potential for applications in topological quantum devices such as Andreev qubits or gatemon architectures. Tue, 30 Sep 2025 15:00:00 GMT https://scholar.dgist.ac.kr/handle/20.500.11750/59294 2025-09-30T15:00:00Z https://scholar.dgist.ac.kr/handle/20.500.11750/57352 Title: Enhanced magnetization by defect-assisted exciton recombination in atomically thin CrCl3 Author(s): Zhang, Xin-Yue; Graham, Thomas K. M.; Bae, Hyeonhu; Wang, Yu-Xuan; Delegan, Nazar; Ahn, Jonghoon; Wang, Zhi-Cheng; Regner, Jakub; Watanabe, Kenji; Taniguchi, Takashi; Jung, Minkyung; Sofer, Zdeněk; Tafti, Fazel; Awschalom, David D.; Heremans, F. Joseph; Yan, Binghai; Zhou, Brian B. Abstract: Two-dimensional semiconductors present unique opportunities to intertwine optical and magnetic functionalities and to tune these performances through defects and dopants. Here, we integrate exciton pumping into a quantum sensing protocol on nitrogen-vacancy centers in diamond to image the optically induced transient stray fields in few-layer, antiferromagnetic CrCl3. We discover that exciton recombination enhances the in-plane magnetization of the CrCl3 layers, with a predominant effect in the surface monolayers. Concomitantly, time-resolved photoluminescence measurements reveal that nonradiative exciton recombination intensifies in atomically thin CrCl3 with tightly localized, nearly dipole-forbidden excitons and amplified surface-to-volume ratio. Supported by experiments under controlled surface exposure and density functional theory calculations, we interpret the magnetically enhanced state to result from a defect-assisted Auger recombination that optically activates electron transfer between water vapor related surface impurities and the spin-polarized conduction band. Our work validates defect engineering as a route to enhance intrinsic magnetism in single magnetic layers and opens an experimental platform for studying optically induced, transient magnetism in condensed matter systems. © 2024 American Physical Society. Mon, 30 Sep 2024 15:00:00 GMT https://scholar.dgist.ac.kr/handle/20.500.11750/57352 2024-09-30T15:00:00Z