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Tunable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanostructures

Tunable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanostructures
Jung, Minkyung
DGIST Authors
Jung, Minkyung
Issue Date
2019 KPS Fall Meeting
The three-dimensional (3D) Dirac semimetals as a new class of emerging quantum materials have attracted considerable attention owing to their exotic electronic properties. Their unique energy band structure makes the Dirac-Weyl semimetals a source of many intriguing physical phenomena. As Dirac semimetals hold gapless linear band dispersion in bulk, it is expected to exhibit controllable p−n junction devices with two gates as performed in graphene devices, which has not been done yet. In this work, we demonstrated a controllable p−n junction in a 3D Dirac semimetal Cd3As2 nanowire with two recessed bottom gates. The device showed clear four different conductance regimes with two gate voltages, confirming that the device forms a p−n junction. Remarkably, the device showed very interesting behavior when strong magnetic fields are applied. In the bipolar regime (p−n or n−p), the device showed quantum dot behavior due to the suppression of Klein tunneling. On the other hand, the device revealed clear conductance plateaus in the n−n regime owing to the edge states associated with the cyclotron motion of carriers at high magnetic fields.
Related Researcher
  • Author Jung, Minkyung Quantum Nanoelectronic Devices Lab
  • Research Interests nanoelectronics, quantum transport, quantum physics, qubit, condensed matter physics,
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Division of NanotechnologyQuantum Nanoelectronic Devices Lab2. Conference Papers
Division of Nanotechnology2. Conference Papers

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