High frequency nanomechanical resonator in a ballistic graphene p-n junction

Abstract

We demonstrate high-frequency mechanical resonators in ballistic graphene p–n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass density and built-in tension for different current annealing steps by comparing the measured mechanical resonant response to a simplified membrane model. In a graphene membrane with high built-in tension, a record resonance frequency of 1.17 GHz is observed after the final current annealing step. We further compare the resonance response measured in the unipolar with the one in the bipolar regime. Interestingly, the resonant signals are strongly enhanced in the bipolar regime.