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High frequency nanomechanical resonator in a ballistic graphene p-n junction

Title
High frequency nanomechanical resonator in a ballistic graphene p-n junction
Authors
Jung, MinkyungRickhaus, PeterZihlmann, SimonEichler, AlexanderMakk, PeterSchönenberger, C.
DGIST Authors
Jung, Minkyung
Issue Date
2019-05-20
Citation
2019 Compound Semiconductor Week (CSW)
Type
Conference
Abstract
We demonstrate high-frequency mechanical resonators in ballistic graphene p–n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior after current annealing. We determine the graphene mass density and built-in tension for different current annealing steps by comparing the measured mechanical resonant response to a simplified membrane model. In a graphene membrane with high built-in tension, a record resonance frequency of 1.17 GHz is observed after the final current annealing step. We further compare the resonance response measured in the unipolar with the one in the bipolar regime. Interestingly, the resonant signals are strongly enhanced in the bipolar regime.
URI
http://hdl.handle.net/20.500.11750/14457
DOI
10.1109/ICIPRM.2019.8819098
Publisher
일본응용물리학회
Related Researcher
  • Author Jung, Minkyung Quantum Nanoelectronic Devices Lab
  • Research Interests nanoelectronics, quantum transport, quantum physics, qubit, condensed matter physics,
Files:
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Collection:
Division of NanotechnologyQuantum Nanoelectronic Devices Lab2. Conference Papers
Division of Nanotechnology2. Conference Papers


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