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Effect of the Hydrogen Diffusion on Electrical Performance and Reliability of IGZO based TFT with Dual Dielectric Layers

Effect of the Hydrogen Diffusion on Electrical Performance and Reliability of IGZO based TFT with Dual Dielectric Layers
Noh, Hee YeonKim, JoonwooLee, Myoung-JaeSung, Byung MokKim, Ki HeeLee, Hyeon-Jun
DGIST Authors
Lee, Myoung-JaeKim, Ki HeeLee, Hyeon-Jun
Issue Date
The 19th International Symposium on the Physics of Semiconductors and Applications
Transparent amorphous oxide semiconductors which exhibit high mobility, excellent uniformity, good transparency and applicability for the low-temperature process have potential to serve as active layer in TFTs. In recent years, research on the oxide semiconductor has been concentrated and finally it has settled on the industrialization. However, a complete understanding of the stable and high performance characteristics on the amorphous oxide semiconductor is important to ensure the success of future electronics application that leverage this technology. In this study, we investigated the effect of the oxygen and hydrogen concentration in the oxide semiconductor TFTs. Samples were fabricated on an undoped Si wafer. The Mo electrodes were used both as gate and source/drain electrodes, which were deposited by sputtering and patterned by lithography and wet etching. A dual dielectric layers was composed of SiOx/SiNx layers by plasma-enhanced chemical vapor deposition (PECVD). A 50 nm a-IGZO film was sputtered by RF sputtering at 100 oC temperature using IGZO target (In:Ga:Zn=1:1:1 atomic ratio) and then post annealed at various temperatures for 1 hour to improve the contact and stability of transistors. To determine the possible correlation between hydrogen diffusion and TFT performance, the chemical composition and concentration profiles of hydrogen(H), indium(In), gallium(Ga), and zinc oxide(ZnO) were analyzed using X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectroscopy characterization (SIMS).
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Division of Nanotechnology2. Conference Papers
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