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Analysis of CIGS Solar Cells Characteristics According to Metal Precursor Structure

Title
Analysis of CIGS Solar Cells Characteristics According to Metal Precursor Structure
Authors
Jeon, Dong-HwanHwang, Dae-KueKim, Dae-Hwan
DGIST Authors
Jeon, Dong-Hwan; Hwang, Dae-KueKim, Dae-Hwan
Issue Date
2018-03-14
Citation
Global Photovoltaic Conference 2018(GPVC 2018)
Type
Conference
Abstract
The CIGS absorption layer differs in the growth characteristics depending on which precursor structure it has, since the constituent elements have different diffusivities [1]. In order to investigate the growth characteristics of the CIGS absorber layer, we deposited different precursor structures and annealed. Precursors with various stack structures were deposited using a co-evaporator. After the precursor was deposited, the substrate temperature was raised and an absorber layer was fabricated supplying Se source by effusion cell. The characteristics of the CIGS absorber layer fabricated according to the order of the thin films were confirmed by SEM and XRD analysis. The devices with the fabricated various precursor structure were measured by I-V and EQE, and electrical characteristics were confirmed.
URI
http://hdl.handle.net/20.500.11750/15083
Publisher
KPVS
Related Researcher
Files:
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Collection:
Division of Energy Technology2. Conference Papers


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