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Spectroscopic characterization of nitrogen- and boron-doped graphene layers

Title
Spectroscopic characterization of nitrogen- and boron-doped graphene layers
Authors
Kamoi, SusumuKim, Jung GonHasuike, NoriyukiKisoda, KenjiHarima, Hiroshi
Issue Date
2015-11
Citation
Japanese Journal of Applied Physics, 54(11), 115101
Type
Article
Article Type
Article
Keywords
Boron-Doped GrapheneChemical Vapor Depositions (CVD)Copper SubstratesElectric Variables MeasurementElectrical Transport MeasurementsFrequency ShiftGrapheneGraphene LayersImpuritiesImpurity ConcentrationMicro Raman SpectroscopyNitrogenRaman SpectroscopySpectroscopic CharacterizationX Ray Photoelectron Spectroscopy
ISSN
0021-4922
Abstract
Nitrogen- and boron-doped graphene layers were grown on copper substrates by alcoholic chemical vapor deposition and characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrical transport measurements. The growth of high-quality monolayer graphene was confirmed by micro-Raman spectroscopy. The G and 2D peaks showed systematic frequency shift and broadening with the impurity concentration. The G peaks showed Fano-like asymmetric line shapes. These behaviors suggested the generation of free carriers by doping. XPS and electrical transport measurements also supported the systematic incorporation of impurities in graphene layers. © 2015 The Japan Society of Applied Physics.
URI
http://hdl.handle.net/20.500.11750/2358
DOI
10.7567/JJAP.54.115101
Publisher
Japan Society of Applied Physics
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