Spectroscopic characterization of nitrogen- and boron-doped graphene layers
- Title
- Spectroscopic characterization of nitrogen- and boron-doped graphene layers
- Author(s)
- Kamoi, Susumu ; Kim, Jung Gon ; Hasuike, Noriyuki ; Kisoda, Kenji ; Harima, Hiroshi
- Issued Date
- 2015-11
- Type
- Article
- Article Type
- Article
- Subject
- Boron-Doped Graphene ; Chemical Vapor Depositions (CVD) ; Copper Substrates ; Electric Variables Measurement ; Electrical Transport Measurements ; Frequency Shift ; Graphene ; Graphene Layers ; Impurities ; Impurity Concentration ; Micro Raman Spectroscopy ; Nitrogen ; Raman Spectroscopy ; Spectroscopic Characterization ; X Ray Photoelectron Spectroscopy
- ISSN
- 0021-4922
- Abstract
- Nitrogen- and boron-doped graphene layers were grown on copper substrates by alcoholic chemical vapor deposition and characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrical transport measurements. The growth of high-quality monolayer graphene was confirmed by micro-Raman spectroscopy. The G and 2D peaks showed systematic frequency shift and broadening with the impurity concentration. The G peaks showed Fano-like asymmetric line shapes. These behaviors suggested the generation of free carriers by doping. XPS and electrical transport measurements also supported the systematic incorporation of impurities in graphene layers. © 2015 The Japan Society of Applied Physics.
- Publisher
- Japan Society of Applied Physics
- Files in This Item:
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- Appears in Collections:
- Convergence Research Center for Wellness 1. Journal Articles
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