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Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer

Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer
Kim, Min JeChoi, ShinyoungLee, MyeongjaeHeo, HyojungLee, YounguCho, Jeong HoKim, BongSoo
Issued Date
ACS Applied Materials & Interfaces, v.9, no.22, pp.19011 - 19020
Photoresponse CharacteristicsPhotoresponsesPhotoswitchingPhototransistorPhototransistorsPolymer FilmsAmbipolar TransistorsAnnealingAnnealing TemperaturesCarrier MobilityConjugated PolymersDiketopyrrolopyrroleElectron AcceptingElectron MobilityElectronsEnergy GapField Effect TransistorsHole MobilityLow Band Gap PolymerLow Bandgap PolymersNear Infrared PhotoresponseOrganic Solar CellsPerformancePhoto Responsive PropertyPhotocurrent/Dark Current RatiosPhotoresponsePolymersStructure Property RelationshipsThin Film Transistors (TFTs)
In this Article, low-bandgap pTTDPP-BT polymers based on electron-accepting pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP) and benzothiadiazole (BT) and electron-donating thienothiophene (TT) moieties were synthesized. Phototransistors have been fabricated using ambipolar-behaving pTTDPP-BT polymers as active channel materials. The electrical and photoresponsive properties of the pTTDPP-BT phototransistors were strongly dependent on the film annealing temperature. As-spun pTTDPP-BT phototransistors exhibited a low hole mobility of 0.007 cm2/(V·s) and a low electron mobility of 0.005 cm2/(V·s), which resulted in low photocurrent detection due to the limited transport of the charge carriers. Thermal treatment of the polymer thin films led to a significant enhancement in the carrier mobilities (hole and electron mobilities of 0.066 and 0.115 cm2/(V·s), respectively, for 200 °C annealing) and thus significantly improved photoresponsive properties. The 200 °C-annealed phototransistors showed a wide-range wavelength (405-850 nm) of photoresponse, and a high photocurrent/dark-current ratio of 150 with a fast photoswitching speed of less than 100 ms. This work demonstrates that a dual acceptor-containing low band gap polymer can be an important class of material in broadband photoresponsive transistors, and the crystallinity of the semiconducting polymer layer has a significant effect on the photoresponse characteristics. © 2017 American Chemical Society.
American Chemical Society
Related Researcher
  • 이윤구 Lee, Youngu 에너지공학과
  • Research Interests OTF Solar cell; OLED; Printed Electronics; 유기박막형 태양전지
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Department of Energy Science and Engineering Organic & Printed Electronics Laboratory(OPEL) 1. Journal Articles


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