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Integer and fractional quantum Hall effect in graphene heterostructure
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dc.contributor.author Kim, Youngwook -
dc.date.accessioned 2023-08-28T19:10:21Z -
dc.date.available 2023-08-28T19:10:21Z -
dc.date.created 2023-07-13 -
dc.date.issued 2023-03 -
dc.identifier.issn 1229-3008 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/46348 -
dc.description.abstract The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime. © 2023, Korea Institute of Applied Superconductivity and Cryogenics. All rights reserved. -
dc.language Korean -
dc.publisher Korea Institute of Applied Superconductivity and Cryogenics -
dc.title Integer and fractional quantum Hall effect in graphene heterostructure -
dc.type Article -
dc.identifier.doi 10.9714/psac.2023.25.1.001 -
dc.identifier.scopusid 2-s2.0-85162888368 -
dc.identifier.bibliographicCitation Kim, Youngwook. (2023-03). Integer and fractional quantum Hall effect in graphene heterostructure. Progress in Superconductivity and Cryogenics, 25(1), 1–5. doi: 10.9714/psac.2023.25.1.001 -
dc.identifier.kciid ART002948116 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor graphene -
dc.subject.keywordAuthor quantum Hall effect -
dc.subject.keywordAuthor fractional quantum Hall effect -
dc.subject.keywordAuthor high magnetic field -
dc.citation.endPage 5 -
dc.citation.number 1 -
dc.citation.startPage 1 -
dc.citation.title Progress in Superconductivity and Cryogenics -
dc.citation.volume 25 -
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김영욱
Kim, Youngwook김영욱

Department of Physics and Chemistry

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