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Effects of a Pretreatment on Al-Doped ZnO Thin Films Grown by Atomic Layer Deposition

Title
Effects of a Pretreatment on Al-Doped ZnO Thin Films Grown by Atomic Layer Deposition
Authors
Ko, Byoung-SooLee, Sang-JuKim, Dae-HwanHwang, Dae-Kue
DGIST Authors
Kim, Dae-HwanHwang, Dae-Kue
Issue Date
2015-03
Citation
Journal of Nanoscience and Nanotechnology, 15(3), 2432-2435
Type
Article
Article Type
Article
Keywords
Al-Doped ZnOAl Doped ZnO Thin FilmsALDAluminumAtomic Layer DepositionCarrier ConcentrationDepositionDoping ConcentrationEnergy GapH2OInfrared DevicesNano-StructuresNanostructureOptical PropertiesPre-TreatmentPre-Treatment ProcessSemiconductor DopingSubstratesTCOThin-FilmsVisible and Near InfraredX Ray DiffractionZinc Oxide
ISSN
1533-4880
Abstract
In this study, we investigated the electrical, structural, and optical properties of Al-doped ZnO (AZO) thin films approximately 50 nm thick grown by atomic layer deposition (ALD) on glass substrates at 200°C. An H2O pretreatment was conducted for all AZO samples. The electrical properties of the AZO thin film were improved after the pretreatment process. The Al doping concentrations were controlled by inserting an Al2O3 cycle after every "n" ZnO cycles while varying n from 99 to 16. As the doping concentration increases, the resistivity decreases and the optical band gap increases. When the Al2O3 cycle ratio is 5%, the electrical resistivity showed the lowest value of 4.66 × 10-3 Ω cm. A carrier concentration of 1.10 × 1020 cm-3, the optical transmittance exceeding 90% were obtained in the visible and near-infrared region. The thin film was strongly textured along the (100) direction in the X-ray diffraction patterns. Copyright © 2015 American Scientific Publishers All rights reserved.
URI
http://hdl.handle.net/20.500.11750/5203
DOI
10.1166/jnn.2015.10257
Publisher
American Scientific Publishers
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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