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p-Type Doping and Compensation in ZnO

Title
p-Type Doping and Compensation in ZnO
Authors
Lee, Woo JinKang, Joon GooChang, K. J.
DGIST Authors
Kang, Joon Goo
Issue Date
2008-07
Citation
Journal of the Korean Physical Society, 53(1), 196-201
Type
Article
Article Type
Article; Proceedings Paper
Keywords
ZnOp-type dopingElectronic structure
ISSN
0374-4884
Abstract
Doping control is an important issue in wideband gap semiconductors such as nitrides and oxides that can be characterized by doping asymmetry, indicating that it is difficult to achieve both low- resistivity p- and n-type semiconductors. Despite theoretical predictions that group-V acceptors have high activation energies, p-type ZnO doped with N, P, As and Sb has been experimentally realized with a maximum hole concentration reaching 1019 cm-3. Recently, p-type conduction was also reported in ZnO doped with Li impurities. Based on the results of first-principles theoretical calculations, the electronic structure of various defects related to group-V and group-I dopants, the compensation mechanism of acceptors and the origin of p-type conduction in ZnO are discussed. Finally, control of p-type doping is examined with a focus on the activation of acceptors by co-doping with two di erent dopant sources and by hydrogenation followed by annealing.
URI
http://hdl.handle.net/20.500.11750/5833
Publisher
한국물리학회
Related Researcher
  • Author Kang, Joon Goo Computational Materials Theory Group
  • Research Interests Computational Materials Science & Materials Design; Nanomaterials for Energy Applications; Theoretical Condensed Matter Physics
Files:
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Collection:
Department of Emerging Materials ScienceComputational Materials Theory Group1. Journal Articles


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