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Improvement in the Performance of Sol-Gel Processed In2O3 Thin-Film Transistor Depending on Sb Dopant Concentration

Title
Improvement in the Performance of Sol-Gel Processed In2O3 Thin-Film Transistor Depending on Sb Dopant Concentration
Authors
Kim, Taegyun(Jang, BonghoBae, Jin-HyukPark, HongsikCho, Chan SeobKwon, Hyuk JunJang, Jaewon
DGIST Authors
Kwon, Hyuk Jun
Issue Date
2017-08
Citation
IEEE ELECTRON DEVICE LETTERS, 38(8), 1027-1030
Type
Article
Article Type
Article
ISSN
0741-3106
Abstract
Solution-processed Sb-doped In2O3 thin-film transistors (TFTs) have been fabricated. To improve the electrical performance, In2O3 was doped with Sb, which exhibits a higher standard electrical potential than In and acts as a booster to create more oxygen vacancies and extra electrons. We observed that as the doping concentration increases, the oxygen deficiency of In2O3 and the concentration of Sb5+ increases, leading to an increase in the field-effectmobility. Doping with an appropriate amount of Sb resulted in a significant improvement of the fieldeffect mobility of TFTs. A TFT exhibiting a high mobility of 1.6 cm(2)/Vs and an ON/OFF current ratio of 10(4) was obtained. A field-effectmobility of ten times higher than that of single In2O3 TFTs was achieved.
URI
http://hdl.handle.net/20.500.11750/6443
DOI
10.1109/LED.2017.2715374
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Related Researcher
  • Author Kwon, Hyuk-Jun Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab.
  • Research Interests
Files:
There are no files associated with this item.
Collection:
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Jang Lab.1. Journal Articles


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