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Issue Date	Title Author(s) Journal	View
2018-05	Effect of NiFeCr seed and capping layers on exchange bias and planar Hall voltage response of NiFe/Au/IrMn trilayer structures Talantsev, Artem ; Aly, Amir Ibrahim Elzawawy ; Kim, CheolGi American Institute of Physics Inc., 2018-05	647
2019-07	Equisensitive adjustment of planar Hall effect sensor's operating field range by material and thickness variation of active layers Aly, Amir Ibrahim Elzawawy ; Kim, SungJoon ; Talantsev, Artem ; Kim, CheolGi Institute of Physics Publishing, 2019-07	626
2018-07	Free and forced Barkhausen noises in magnetic thin film based cross-junctions Aly, Amir Ibrahim Elzawawy ; Talantsev, A. ; Kim, Cheol Gi Elsevier BV, 2018-07	628
2019-08	Reduced thermal dependence of the sensitivity of a planar Hall sensor Mahfoud, Mohamed ; Quang-Hung Tran ; Wane, Sidina ; Duc-The Ngo ; Belarbi, El Habib ; Boukra, AbdelAziz ; Kim, Mijin ; Aly, Amir Ibrahim Elzawawy ; Kim, CheolGi ; Reiss, Guenter ; Dieny, Bernard ; Bousseksou, Azzedine ; Terki, Feria American Institute of Physics, 2019-08	461

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