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Issue Date	Title Author(s) Journal	View
2018-05	Effect of NiFeCr seed and capping layers on exchange bias and planar Hall voltage response of NiFe/Au/IrMn trilayer structures Talantsev, Artem ; Aly, Amir Ibrahim Elzawawy ; Kim, CheolGi American Institute of Physics Inc., 2018-05	648
2019-07	Equisensitive adjustment of planar Hall effect sensor's operating field range by material and thickness variation of active layers Aly, Amir Ibrahim Elzawawy ; Kim, SungJoon ; Talantsev, Artem ; Kim, CheolGi Institute of Physics Publishing, 2019-07	626
2020-01	Performance Validation of a Planar Hall Resistance Biosensor through Beta-Amyloid Biomarker Kim, SungJoon ; Torati, Sri Ramulu ; Talantsev, Artem ; Jeon, ChangYeop ; Lee, SungBae ; Kim, CheolGi MDPI AG, 2020-01	490
2019-09	Planar Hall Resistance Sensor With Improved Thermal Stability Jeon, Taehyeong ; Lee, Jaehoon ; Talantsev, Artem ; Kim, CheolGi Institute of Electrical and Electronics Engineers, 2019-09	533
2020-01	Highly Bendable Planar Hall Resistance Sensor Kim, Mijin ; Oh, Sunjong ; Jeong, Wooseong ; Talantsev, Artem ; Jeon, Taehyeong ; Chaturvedi, Richa ; Lee, Sungwon ; Kim, CheolGi Institute of Electrical and Electronics Engineers, 2020-01	606
2021-08	Microscopic manipulations of interatomic coupling density for tailoring of exchange bias mediated by mesoscopic interface topology Talantsev, Artem ; Elzwawy, Amir ; Kim, Sung-Joon ; Kim, CheolGi Applied Surface Science, v.558, 2021-08	305

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