DGIST Scholar: Two-dimensional Nanoelectronic Devices toward High Frequency Applications : From SynTheses to Applications

Department of Electrical Engineering and Computer Science Theses Ph.D.

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Two-dimensional Nanoelectronic Devices toward High Frequency Applications : From SynTheses to Applications

Title: Two-dimensional Nanoelectronic Devices toward High Frequency Applications : From SynTheses to Applications

Author(s): Yang, Jae Hoon

DGIST Authors: Cho, Chang Hee ; Yang, Jae Hoon ; Jang, Jae Eun

Advisor: 장재은

Co-Advisor(s): Cho, Chang Hee

Issued Date: 2020

Awarded Date: 2020-02

Type: Thesis

Description: Graphene, CVD, Graphene-based Tunneling Diode, RF Transmission Line, Graphene Doping

Table Of Contents: Chapter 1. Introduction to Graphene in Electronic Applications What is the graphene
1.1 What is the graphene - 1
1.1.1 Carbon Allotropes - 1
1.1.2 Basic of Graphene -2
1.2 Outstanding Properties of the Graphene - 4
1.3 Advances in Graphene Electronics for High Frequency Applications - 6
1.4 Objectives of Theses - 14
1.5 Theses Outline - 15

Chapter 2. Electronic Devices Compatible Large-Area Graphene SynTheses by Chemical Vapor Deposition
2.1 Introduction and Motivation - 22
2.2 Experimental Methods - 24
2.2.1 Chemical Vapor Deposition System for Graphene Growth - 24
2.2.2 Polymeric Assisted Wet Transfer Process of Graphene - 26
2.2.3 2-Terminal Device Fabrication with Graphene 27 Results and Discussion - 29
2.3 Results and Discussion
2.3.1 Graphene Growth Procedure and Characterization - 29
2.3.2 Optimization of Growth Condition for High Quality of Graphene - 32
2.3.3 Electrical Properties of Synthesized Large Area Graphene- 36
2.4 Conclusion - 38

Chapter 3. Grain Boundary Visualization of CVD grown Graphene
3.1 Introduction and Motivation - 41
3.2 Experimental Methods - 43
3.2.1 Sulfurization Process - 43
3.2.2 Graphene SynTheses and Transfer Method - 44
3.2.3 Spectroscopy Measurement - 44
3.3 Results and Discussion - 45
3.3.1 Sulfurization Process of Cu Catalyst at Grain Boundaries - 45
3.3.2 SEM and EDX Analysis of Sulfurized Cu - 45
3.3.3 Time Evolution of Sulfurization Process - 48
3.3.4 Spatial Raman Mapping of Graphene Grain Boundaries - 51
3.3.5 Electron Diﬀraction Pattern at Grain Boundaries - 53
3.3.6 Composition and Structural Analysis of Sulfurized Cu - 54
3.4 Conclusion - 57

Chapter 4. Geometrically Enhanced Quantum Tunneling Phenomenon in Graphene-Vacuum Junction
4.1 Introduction and Motivation - 64
4.2 Experimental Methods - 66
4.2.1 Graphene SynTheses and Transfer Method - 66
4.2.2 Measurement and Characterization - 67
4.2.3 Simulation - 67
4.3 Results and Discussion - 68
4.3.1 Basic Device Structures and Its Characterization - 68
4.3.2 Geometric Eﬀects on Quantum Tunneling Phenomenon - 70
4.3.3 Electrical Characteristics of Graphene Tunneling Diode - 73
4.3.4 Underlying Electron Transport Physics in Tunneling Diode - 76
4.4 Conclusion - 80

Chapter 5. Radio-Frequency Transmission Properties of Graphene by Controlling Carrier Concentration
5.1 Introduction and Motivation - 86
5.2 Experimental Methods - 89
5.2.1 Graphene SynTheses and Transfer - 89
5.2.2 RF Transmission Line Device Fabrication - 90
5.2.3 Oxygen Plasma and Amorphous Carbon Doping Process - 90
5.2.4 Electrical Measurement - 91
5.2.5 Spectroscopy Measurement - 91
5.3 Results and Discussion - 92
5.3.1 Fabrications of Coplanar Waveguide (CPW) Transmission Line with Graphene - 92
5.3.2 p-doped Graphene Induced by Oxygen Molecule Adsorption - 93
5.3.3 Stable Charge Transfer Doping of Graphene with Amorphous Carbon Hetero-Junction - 107
5.3.4 Electric Stability Test - 120
5.4 Conclusion - 122

Chapter 6. Summary and Future Work
6.1 Summary of Theses - 130
6.2 Future Work - 131

Summary (in Korean) 133