Division of Nanotechnology 1. Journal Articles
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Bi-Layered Reram: Multi-Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic

Title
Bi-Layered Reram: Multi-Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic
Author(s)
Chung, U-In ; Kim, Young-Bae ; Lee, Seung Ryul ; Lee, Dongsoo ; Lee, Chang Bum ; Chang, Man ; Kim, Kyung min ; Hur, Ji Hyun ; Lee, Myoung-Jae ; Kim, Chang Jung
DGIST Authors
Chung, U-In ; Kim, Young-Bae ; Lee, Seung Ryul ; Lee, Dongsoo ; Lee, Chang Bum ; Chang, Man ; Kim, Kyung min ; Hur, Ji Hyun ; Lee, Myoung-Jae ; Kim, Chang Jung
Issued Date
2012-06
Type
Article
URI
http://hdl.handle.net/20.500.11750/13397
DOI
10.1002/9783527667703.ch19
Publisher
Wiley-VCH Verlag GmbH & Co. KGaA
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Division of Nanotechnology 1. Journal Articles

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