Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
- Title
- Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
- Author(s)
- Baek, I.G. ; Lee, M.S. ; Sco, S. ; Lee, M.J. ; Seo, D.H. ; Suh, D.-S. ; Park, J.C. ; Park, S.O. ; Kim, H.S. ; Yoo, I.K. ; Chung, U.-I. ; Moon, J.T.
- DGIST Authors
- Baek, I.G. ; Lee, M.S. ; Sco, S. ; Lee, M.J. ; Seo, D.H. ; Suh, D.-S. ; Park, J.C. ; Park, S.O. ; Kim, H.S. ; Yoo, I.K. ; Chung, U.-I. ; Moon, J.T.
- Issued Date
- 2004-12
- Type
- Article
- Publisher
- IEEE
- Related Researcher
-
-
Lee, Myoung-Jae 나노기술연구부
- Research Interests
-
- Files in This Item:
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There are no files associated with this item.
- Appears in Collections:
- Division of Nanotechnology 1. Journal Articles
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