Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Lee, Byeoksong | - |
dc.contributor.author | Kang, Joongoo | - |
dc.date.accessioned | 2022-10-26T07:00:00Z | - |
dc.date.available | 2022-10-26T07:00:00Z | - |
dc.date.created | 2022-06-16 | - |
dc.date.issued | 2022-09 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/16931 | - |
dc.description.abstract | The recent bottom-up synthesis of atomically precise nanoporous graphene (NPG) offers a way of tuning graphene's properties by forming NPG/graphene (Grp) bilayers. Depending on the size, shape, and periodicity of the nanopores in NPG, the heterobilayers can exhibit various functionalities. This theoretical work presents an inverse design of NPG/Grp bilayers with electric-field-tunable bandgaps as a target property. The interlayer interaction in such heterobilayers can induce a bandgap in graphene either by breaking inversion symmetry (type I) or by moving and merging Dirac points of graphene (type II). The bandgap opening also requires electron-hole symmetry breaking induced by an applied perpendicular electric field, leading to two distinct, linear versus nonlinear, field dependences of the bandgap for the type-I and type-II cases, respectively. To translate the underlying physics of the bandgap opening in graphene into real atomic structures, the authors develop an inverse design method and find NPG/Grp bilayers with the target functionality. The field-tunable bandgap in graphene, supported by first-principles calculations for the inverse-designed systems, holds promise for new types of graphene transistors. © 2022 Wiley-VCH GmbH. | - |
dc.language | English | - |
dc.publisher | Wiley-VCH Verlag | - |
dc.title | Electric-Field-Tunable Bandgaps in the Inverse-Designed Nanoporous Graphene/Graphene Heterobilayers | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/aelm.202200252 | - |
dc.identifier.wosid | 000797470400001 | - |
dc.identifier.scopusid | 2-s2.0-85130261025 | - |
dc.identifier.bibliographicCitation | Advanced Electronic Materials, v.8, no.9 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | density functional theory | - |
dc.subject.keywordAuthor | effective Hamiltonian | - |
dc.subject.keywordAuthor | nanoporous graphene | - |
dc.subject.keywordPlus | BILAYER GRAPHENE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.citation.number | 9 | - |
dc.citation.title | Advanced Electronic Materials | - |
dc.citation.volume | 8 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science; Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.type.docType | Article | - |
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