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Perpendicular magnetic anisotropy and interfacial dzyaloshinskii-moriya interaction in Pt/CoFeSiB structures

Title
Perpendicular magnetic anisotropy and interfacial dzyaloshinskii-moriya interaction in Pt/CoFeSiB structures
Authors
Cha, I.H.[Cha, In Ho]Kim, N.-H.[Kim, Nam Hui]Kim, Y.J.[Kim, Yong Jin]Kim, G.W.[Kim, Gyu Won]You, C.-Y.[You, Chun Yeol]Kim, Y.K.[Kim, Young Keun]
DGIST Authors
Kim, N.-H.[Kim, Nam Hui]; You, C.-Y.[You, Chun Yeol]
Issue Date
2017
Citation
IEEE Magnetics Letters, 8
Type
Article
Article Type
Article
Keywords
After-Heat TreatmentAnisotropyCobalt CompoundsDC Magnetron SputteringDzyaloshinskii-Moriya InteractionInterfaces (Materials)Magnetic AnisotropyMagnetic DevicesMagnetic FilmMagnetic FilmsMagnetic MaterialsMagnetic Random-Access Memory (MRAM)Magnetic StorageMagnetismPerpendicular Magnetic AnisotropyPlatinumRandom Access StorageSaturation MagnetizationSpin-Orbit CouplingsSpin ElectronicSpin ElectronicsThickness Dependence
ISSN
1949-307X
Abstract
Magnetic materials exhibiting perpendicular magnetic anisotropy (PMA) have an important role in the development of high-density magnetic random-access memory and domain-wall devices. Exotic physical phenomena result from spin-orbit coupling, such as PMA and the interfacial Dzyaloshinskii-Moriya interaction (iDMI), at interfaces between nonmagnetic (NM) and ferromagnetic (FM) materials. We report on the NM Pt thickness dependence of PMA and iDMI in Ta/Pt/CoFeSiB/Ta films and the MgO thickness dependence of PMA in Ta/Pt/CoFeSiB/MgO/Ta films. We selected amorphous FM CoFeSiB because of its lower saturation magnetization (560 eμcm3) than that of Co or CoFeB, which may be beneficial for lowering the current density for switching. All samples were deposited by dc magnetron sputtering and annealed at 300 °C for 1 h. The Ta(3)/Pt(5)/CoFeSiB(1.5)/Ta(5) (nm) film exhibited PMA in the as-deposited state as well as after heat treatment. This structure possessed an iDMI energy density of 0.386 mJ/m2. © 2010-2012 IEEE.
URI
http://hdl.handle.net/20.500.11750/2094
DOI
10.1109/LMAG.2016.2617304
Publisher
Institute of Electrical and Electronics Engineers Inc.
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceETC1. Journal Articles


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