Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Yun, Won Seok | - |
dc.contributor.author | Lee, J. D. | - |
dc.date.available | 2017-07-05T08:50:32Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2015-02 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2351 | - |
dc.description.abstract | We investigate the strain-induced electronic and magnetic properties of single-layer (1L) MoS2 with vacancy defects using the density functional theory calculation. When the tensile strain is applied, 1L-MoS2 with vacancy becomes ferromagnetic and metallic. We elucidate that, from the electronic band structure of vacancy-defect-doped 1L-MoS2, the impurity bands inside the gap play a role of seed to drive novel magnetic and electronic properties as the strain increases. In particular, we also find that 1L-MoS2 with two-sulfur vacancy (V2S) shows the largest magnetic moment at ∼14% strain among various vacancy types and undergoes a spin reorientation transition from out-of-plane to in-plane magnetization at ∼13% strain. This implies that the strain-manipulated 1L-MoS2 with V2S can be a promising candidate for new spintronic applications. © 2015 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.title | Strain-Induced Magnetism in Single-Layer MoS2: Origin and Manipulation | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/jp510308a | - |
dc.identifier.scopusid | 2-s2.0-84949117001 | - |
dc.identifier.bibliographicCitation | Journal of Physical Chemistry C, v.119, no.5, pp.2822 - 2827 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | NANORIBBONS | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.citation.endPage | 2827 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 2822 | - |
dc.citation.title | Journal of Physical Chemistry C | - |
dc.citation.volume | 119 | - |
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