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The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy

Title
The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy
Authors
Moon, P[Moon, Pilkyung]Lee, JD[Lee, J. D.]Ha, SK[Ha, S. K.]Lee, EH[Lee, E. H.]Choi, WJ[Choi, W. J.]Song, JD[Song, J. D.]Kim, JS[Kim, J. S.]Dang, LS[Dang, L. S.]
DGIST Authors
Lee, JD[Lee, J. D.]
Issue Date
2012-11
Citation
Physica Status Solidi: Rapid Research Letters, 6(11), 445-447
Type
Article
Article Type
Article
Keywords
AlgaasAluminum Gallium ArsenideAnnealingDroplet EpitaxyDropsEmission EnergiesEmission SpectroscopyEmission SpectrumsEpitaxial GrowthGaAsGaAs/AlGaAsLuminescenceOptical ActivationOptical PropertiesPeak ShiftPostgrowth Thermal AnnealingQuantum DotsScanning Transmission Electron MicroscopySemiconductor Quantum DotsSuperlatticesThermal-AnnealingTransmission Electron Microscopy
ISSN
1862-6254
Abstract
We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy, and obtained the geometries of the dots by scanning transmission electron microscopy. Post-growth thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We measured the emission energy shifts of the dots and the underlying superlattice by post- growth thermal annealing, and specified the emission from dots by selectively etching the structure down to a low layer of quantum dots. We studied the influence of the degree of annealing on the optical properties of the dots from the peak shifts of the superlattice, since the superlattice has a uniform and well-defined geometry. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
URI
http://hdl.handle.net/20.500.11750/2455
DOI
10.1002/pssr.201206369
Publisher
Wiley-VCH Verlag
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceETC1. Journal Articles


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