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Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells

Title
Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells
Authors
Oh, BY[Oh, Byeong-Yun]Kim, JH[Kim, Jeong-Hwan]Han, JW[Han, Jin-Woo]Seo, DS[Seo, Dae-Shik]Jang, HS[Jang, Hwan Soo]Choi, HJ[Choi, Ho-Jin]Baek, SH[Baek, Seong-Ho]Kim, JH[Kim, Jae Hyun]Heo, GS[Heo, Gi-Seok]Kim, TW[Kim, Tae-Won]Kim, KY[Kim, Kwang-Young]
DGIST Authors
Jang, HS[Jang, Hwan Soo]; Choi, HJ[Choi, Ho-Jin]; Baek, SH[Baek, Seong-Ho]; Kim, JH[Kim, Jae Hyun]
Issue Date
2012-01
Citation
Current Applied Physics, 12(1), 273-279
Type
Article
Article Type
Article
Keywords
Al-Doped ZnOAluminumAtomic Layer DepositionAtomsCarrier ConcentrationCarrier MobilityChemical VaporChemical Vapor Depositions (CVD)Conductive FilmsCrystal Atomic StructureCrystallinitiesDisplay DevicesElectric ConductivityElectrical PropertiesElectrical PropertyElectrical ResistivityElectrodesElectronic DeviceFilm GrowthFree ElectronGlass SubstratesGrowth TemperatureMetallic FilmsMonolayer GrowthMonolayersOptical PropertiesOptimum ConditionsPassivationPreferred OrientationsSolar CellsSubstratesSurface Chemical ReactionsSurface PassivationSurface ReactionsThin Film StructureTransparent ConductiveTransparent ElectrodeZincZinc OxideZinc Oxide II-VI SemiconductorsZnO FilmsZnO:Al Films
ISSN
1567-1739
Abstract
Structural, electrical, and optical properties of atomic layer-controlled Al-doped ZnO (ZnO:Al) films grown by atomic layer deposition (ALD) on glass substrates were characterized at various growth temperatures for use as transparent electrodes. The Al atomic content in ZnO:Al films increased due to the reduced ZnO film growth rate with increasing temperature. The preferred orientation of ZnO:Al films was changed, and the optimum condition for best crystallinity was identified by varying the growth temperature. Furthermore, the carrier concentration of free electron was increased by substituting the Zn sites with Al atoms in the crystal, resulting from monolayer growth based on alternate self-limiting surface chemical reactions. The electrical resistivity of ZnO:Al film grown by ALD at 225 °C reached the lowest value of 8.45 × 10-4 Ω cm, with a carrier mobility of 9.00 cm 2 V-1 s-1 and optical transmittance of ∼93%. This result demonstrates that ZnO:Al films grown by ALD possess excellent potential for applications in electronic devices and displays as transparent electrodes and surface passivation layers. © 2011 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/2475
DOI
10.1016/j.cap.2011.06.017
Publisher
Elsevier B.V.
Related Researcher
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Collection:
ETC1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles


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